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To evaluate the applicability of desert dark septate endophytes (DSEs) in crop cultivation, Alternaria alternata (Fr.) Keissl. (Aa), Paraphoma pye Moslemi & P.W.J. Taylor (Pp), and Paraphoma radicina (McAlpine) Morgan-Jones & J.F. White (Pr) were inoculated into nonhost wheat growing under three water conditions. The plants’ biomass, vegetative growth, and physiological parameters were investigated. At harvest, all DSE strains were effective colonizers under all treatments. These DSEs generally positively affected wheat growth but varied among different DSE species, and this promoting effect was more obvious under drought conditions. Under mild drought (MD) treatments, Aa and Pr increased the leaf number and plant height of hosts. Pr showed a significant beneficial influence on the wheat’s total biomass under all treatments, while Aa and Pp showed benefits only under the well-watered or MD treatment. The response mechanisms of DSE-inoculated wheat under stress may be due to the enhanced photosynthetic efficiency and antioxidant system. Generally, Pr had a stronger beneficial effect. The improved growth and fitness of the inoculated hosts under drought stress may reduce their water supply requirements during seedling growth. We speculate that inoculating wheat with this strain could be a promising approach for water-saving cultivation in arid environments.

Dark septate endophytes (DSEs) usually colonize plant roots, especially in stress environments. However, their relationship with plants ranges from beneficial to harmful and has remained largely uncharacterized. In the present study, 14 DSE species grouped into 11 genera were isolated from the roots of a desert plant, Artemisia ordosica, which is widely distributed in northwest China. Three dominant DSE species—Paraphoma chrysanthemicola (Pc), Alternaria chartarum (Ac), and Acrocalymma vagum (Av)—were selected and tested for their resistance to drought in vitro. Furthermore, we characterized the responses of A. ordosica under drought conditions in relation to the presence of these DSEs following inoculation. The results showed that all three strains grew well under in vitro drought stress, and the biomass of Ac and Av was significantly higher than that of the unstressed control. The effects of DSE inoculation on the growth of A. ordosica under drought stress varied according to the different DSE species but were generally beneficial. Under drought stress, Av and Pc promoted plant growth, antioxidant enzyme activity, and root development of the hosts. The Ac strain conferred obvious positive effects on the antioxidant enzyme activity of the hosts. In general, Av and Pc demonstrated better application potential for improving the drought resistance of A. ordosica.

Recently, tin oxide (SnO2) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (VO) concentration leads to poor performance of SnO2 thin films and devices. In this paper, with tetraethyl orthosilicate (TEOS) as the Si source, which can decompose to release heat and supply energy when annealing, Si doped SnO2 (STO) films and inverted staggered STO TFTs were successfully fabricated by a solution method. An XPS analysis showed that Si doping can effectively inhibit the formation of VO, thus reducing the carrier concentration and improving the quality of SnO2 films. In addition, the heat released from TEOS can modestly lower the preparation temperature of STO films. By optimizing the annealing temperature and Si doping content, 350 °C annealed STO TFTs with 5 at.% Si exhibited the best device performance: Ioff was as low as 10−10 A, Ion/Ioff reached a magnitude of 104, and Von was 1.51 V. Utilizing TEOS as an Si source has a certain reference significance for solution-processed metal oxide thin films in the future.

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 × 106, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

Optical detection is of great significance in various fields such as industry, military, and medical treatment, especially ultraviolet (UV) photodetectors. Moreover, as the demand for wearable devices continues to increase, the UV photodetector, which is one of the most important sensors, has put forward higher requirements for bending resistance, durability, and transparency. Tin oxide (SnO2) has a wide band gap, high ultraviolet exciton gain, etc., and is considered to be an ideal material for preparing UV photodetectors. At present, SnO2-based UV photodetectors have a transparency of more than 70% in the visible light region and also have excellent flexibility of 160% tensile strain. Focusing on SnO2 nanostructures, the article mainly summarizes the progress of SnO2 UV photodetectors in flexibility and transparency in recent years and proposes feasible optimization directions and difficulties.