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This paper presents the results of a study on the formation of nanostructures of electrochemical titanium oxide for neuromorphic applications. Three anodization synthesis techniques were considered to allow the formation of structures with different sizes and productivity: nanodot, lateral, and imprint. The mathematical model allowed us to calculate the processes of oxygen ion transfer to the reaction zone; the growth of the nanostructure due to the oxidation of the titanium film; and the formation of TiO, Ti2O3, and TiO2 oxides in the volume of the growing nanostructure and the redistribution of oxygen vacancies and conduction channel. Modeling of the nanodot structure synthesis process showed that at the initial stages of growth, a conductivity channel was formed, connecting the top and bottom of the nanostructure, which became thinner over time; at approximately 640 ms, this channel broke into upper and lower nuclei, after which the upper part disappeared. Modeling of the lateral nanostructure synthesis process showed that at the initial stages of growth, a conductivity channel was also formed, which quickly disappeared and left a nucleus that moved after the moving AFM tip. The simulation of the imprint nanostructure synthesis process showed the formation of two conductivity channels at a distance corresponding to the dimensions of the template tip. After about 460 ms, both channels broke, leaving behind embryos. The nanodot, lateral, and imprint nanostructure XPS spectra confirmed the theoretical calculations presented earlier: in the near-surface layers, the TiO2 oxide was observed, with the subsequent titanium oxide nanostructure surface etching proportion of TiO2 decreasing, and proportions of Ti2O3 and TiO oxides increasing. All nanodot, lateral, and imprint nanostructures showed reproducible resistive switching over 1000 switching cycles and holding their state for 10,000 s at read operation.

This paper presents the results of experimental studies of the influence of high-frequency magnetron sputtering power on the structural and electrophysical properties of nanocrystalline ZnO films. It is shown that at a magnetron sputtering power of 75 W in an argon atmosphere at room temperature, ZnO films have a relatively smooth surface and a uniform nanocrystalline structure. Based on the results obtained, the formation and study of resistive switching of transparent ITO/ZnO/ITO memristor structures as well as a crossbar array based on them were performed. It is demonstrated that memristor structures based on ZnO films obtained at a magnetron sputtering power of 75 W exhibit stable resistive switching for 1000 cycles between high resistance states (HRS = 537.4 ± 26.7 Ω) and low resistance states (LRS = 291.4 ± 38.5 Ω), while the resistance ratio in HRS/LRS is ~1.8. On the basis of the experimental findings, we carried out mathematical modeling of the resistive switching of this structure, and it demonstrated that the regions with an increase in the electric field strength along the edge of the upper electrode become the main sources of oxygen vacancy generation in ZnO film. A crossbar array of 16 transparent ITO/ZnO/ITO memristor structures was also fabricated, demonstrating 20,000 resistive switching cycles between LRS = 13.8 ± 1.4 kΩ and HRS = 34.8 ± 2.6 kΩ for all devices, with a resistance ratio of HRS/LRS of ~2.5. The obtained results can be used in the development of technological processes for the manufacturing of transparent memristor crossbars for neuromorphic structures of machine vision, robotics, and artificial intelligence systems.

This paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpose, we investigated scratching probe nanolithography regimes using the Taguchi method, which is known as a reliable method for improving the reliability of the result. The AFM parameters, including normal load, scratch distance, probe speed, and probe direction, are optimized on the photoresist thin film by the Taguchi method. As a result, the pinholes with diameter ranged from 25.4 ± 2.2 nm to 85.1 ± 6.3 nm, and the groove array with a depth of 40.5 ± 3.7 nm and a roughness at the bottom of less than a few nanometers was formed. Then, based on the Si/TiN/ZnO/photoresist structures, we fabricated and investigated memristors with different spot sizes and TiN top contact thickness. As a result, the HRS/LRS ratio, USET, and ILRS are well controlled for a memristor size from 27 nm to 83 nm and ranged from ~8 to ~128, from 1.4 ± 0.1 V to 1.8 ± 0.2 V, and from (1.7 ± 0.2) × 10−10 A to (4.2 ± 0.6) × 10−9 A, respectively. Furthermore, the HRS/LRS ratio and USET are well controlled at a TiN top contact thickness from 8.3 ± 1.1 nm to 32.4 ± 4.2 nm and ranged from ~22 to ~188 and from 1.15 ± 0.05 V to 1.62 ± 0.06 V, respectively. The results can be used in the engineering and manufacturing of memristive structures for neuromorphic applications of brain-inspired artificial intelligence systems.

The creation of sustainable power sources for wearable electronics and self-powered systems is a promising direction of modern electronics. At the moment, a search for functional materials with high values of piezoelectric coefficient and elasticity, as well as non-toxicity, is underway to generate such power sources. In this paper, nitrogen-doped carbon nanotubes (N-CNTs) are considered as a functional material for a piezoelectric nanogenerator capable of converting nanoscale deformations into electrical energy. The effect of defectiveness and of geometric and mechanical parameters of N-CNTs on the current generated during their deformation is studied. It was established that the piezoelectric response of N-CNTs increased nonlinearly with an increase in the Young’s modulus and the aspect ratio of the length to diameter of the nanotube and, on the contrary, decreased with an increase in defectiveness not caused by the incorporation of nitrogen atoms. The advantages of using N-CNT to create energy-efficient piezoelectric nanogenerators are shown.

This article presents the results of experimental studies of the impact of electrode material and the effect of nanoscale film thickness on the resistive switching in forming-free nanocrystalline ZnO films grown by pulsed laser deposition. It was demonstrated that the nanocrystalline ZnO film with TiN, Pt, ZnO:In, and ZnO:Pd bottom electrodes exhibits a nonlinear bipolar effect of forming-free resistive switching. The sample with Pt showed the highest resistance values RHRS and RLRS and the highest value of Uset = 2.7 ± 0.4 V. The samples with the ZnO:In and ZnO:Pd bottom electrode showed the lowest Uset and Ures values. An increase in the number of laser pulses from 1000 to 5000 was shown to lead to an increase in the thickness of the nanocrystalline ZnO film from 7.2 ± 2.5 nm to 53.6 ± 18.3 nm. The dependence of electrophysical parameters (electron concentration, electron mobility, and resistivity) on the thickness of the forming-free nanocrystalline ZnO film for the TiN/ZnO/W structure was investigated. The endurance test and homogeneity test for TiN/ZnO/W structures were performed. The structure Al2O3/TiN/ZnO/W with a nanocrystalline ZnO thickness 41.2 ± 9.7 nm was shown to be preferable for the manufacture of ReRAM and memristive neuromorphic systems due to the highest value of RHRS/RLRS = 2307.8 ± 166.4 and low values of Uset = 1.9 ± 0.2 V and Ures = −1.3 ± 0.5 V. It was demonstrated that the use of the TiN top electrode in the Al2O3/TiN/ZnO memristor structure allowed for the reduction in Uset and Ures and the increase in the RHRS/RLRS ratio. The results obtained can be used in the manufacturing of resistive-switching nanoscale devices for neuromorphic computing based on the forming-free nanocrystalline ZnO oxide films.

We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10−4 Torr to 3 × 10−2 Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 1017 cm−3 to (42.64 ± 4.46) × 1017 cm−3, electron mobility from 0.25 ± 0.03 cm2/(V·s) to 7.12 ± 1.32 cm2/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 106 Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 103 Ω, and the ratio RHRS/RLRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.

We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition. The influence of post-growth annealing modes on the electroforming voltage and the resistive switching effect in ZnO nanocrystalline films is investigated. We demonstrated that nanocrystalline zinc oxide films, fabricated at certain regimes, show the electroforming-free resistive switching. It was shown, that the forming-free nanocrystalline ZnO film demonstrated a resistive switching effect and switched at a voltage 1.9 ± 0.2 V from 62.42 ± 6.47 (RHRS) to 0.83 ± 0.06 kΩ (RLRS). The influence of ZnO surface morphology on the resistive switching effect is experimentally investigated. It was shown, that the ZnO nanocrystalline film exhibits a stable resistive switching effect, which is weakly dependent on its nanoscale structure. The influence of technological parameters on the resistive switching effect in a forming-free ZnO nanocrystalline film is investigated. The results can be used for fabrication of new-generation micro- and nanoelectronics elements, including random resistive memory (ReRAM) elements for neuromorphic structures based on forming-free ZnO nanocrystalline films.

The article is devoted to heterocyclization of bis(2-chloroprop-2-en-1-yl)sulfide which proceeds in hydrazine hydrate–alkali medium and leads to formation of thiophene and pyrrole derivatives: previously described 4,5,9,10-tetrahydrocycloocta[1,2-c;5,8-c’]dithiophene, as well as unknown hydrazone of 5-methylidene-3-methyldihydrothiophen-2-one and 1-amino-2-(propynylsulfanylpropenylsulfanyl)-3,5-dimethylpyrrole. Tentative mechanisms for the formation of the heterocyclic products are discussed. Obtained hydrazone of 5-methylidene-3-methyldihydrothiophen-2-one was used for the synthesis of a range of azine derivatives and in oxidation process with SeO2. The found reactions open up expedient approaches to the formation of various hardly accessible thiophene and pyrrole compounds from 2,3-dichloropropene and elemental sulfur as starting reagents.

The paper assesses the current state and development trends of the social service system. The authors presented the current scheme of the system of social services in Russia and determined that it includes the budgetary, non-profit and commercial sectors. In particular, it is shown that the dominant sector providing social services is the public sector. However, despite the dominant role of the public sector in the provision of social services, in recent years there has been a tendency towards an increasing role of the sector of non-profit (non-budget) and commercial organizations, which have different principles of pricing for social services. For a more complete description and development trends of the social services system in the Russian Federation, the authors determined the most important indicators characterizing the functioning of the social service system and the provision of social services to the population. For a quantitative assessment, a regression model of the dependence of these indicators was created. Analysis of the data in the table shows that, on average, over the past 3 years, the number of recipients of social services in the stationary form of social services has de-creased by 2% per year, while in the form of social services at home it has grown by 0.25% per year. The authors determined, that in the future, the demand for inpatient social services will be within the range of recent years, which should not increase the load on the system.

This work is devoted to the development of non-lithographic template methods of synthesis. These methods have a significant advantage in terms of structure formation: there is no need to design and produce masks, which greatly simplifies the process, and more of them can work with nonplanar substrates. The purpose of this study was to reveal the conditions for the synthesis of titanium dioxide xerogel films of different topologies as well as to develop a technique for non-lithographic template electrochemical synthesis of micron metal particles arrays and to study the structure of the resulting coatings. The films were deposited on the surface of substrates via dip coating. Specific topology of the films was achieved by template sol-gel synthesis. Their structures were analyzed by SEM and XRD. Template synthesis of metal micro particles were realized by pulsed electrochemical deposition of metals into the perforations of xerogel films. Obtained materials were analyzed by SEM and XRD; the element distribution on the surface was determined by the EDS detector of SEM. Based on the analysis results, we suggest the mechanisms of formation of the xerogel topology and proved the efficiency of pulsed electrodeposition for template synthesis of micron particles arrays.

The development of new composites with improved functional properties is the important task of modern materials science. The composites must be structurally organized to provide improved properties. For metal-ceramic composites, there is a need for a uniform distribution of the dispersed ceramic phase in the bulk metallic matrix The modification of the dispersed ceramic phase surface with a metal coating is one of the more effective ways to accomplish this. Particularly, in this work, the conditions of Ni nanolayer deposition on titanium carbide (TiC) particles were studied. The goal was to create core–shell particles with a thickness of the Ni coating on TiC not exceeding 90 nm. Preliminary work was also carried out to study the effect of the dispersed phase composition on the mechanical properties of the composite with an Al matrix.

In this work, we analyze the efficiency of the modification of the implant surface. This modification was reached by the formation of a two-level relief hierarchy by means of a sol-gel approach that included dip coating with subsequent shock drying. Using this method, we fabricated a nanoporous layer with micron-sized defects on the nanotitanium surface. The present work continues an earlier study by our group, wherein the effect of osteoblast-like cell adhesion acceleration was found. In the present paper, we give the results of more detailed evaluation of coating efficiency. Specifically, cytological analysis was performed that included the study of the marker levels of osteoblast-like cell differentiation. We found a significant increase in the activity of alkaline phosphatase at the initial incubation stage. This is very important for implantation, since such an effect assists the decrease in the induction time of implant engraftment. Moreover, osteopontin expression remains high for long expositions. This indicates a prolonged osteogenic effect in the coating. The results suggest the acceleration of the pre-implant area mineralization and, correspondingly, the potential use of the developed coatings for bone implantation.