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Your search keyword '"Wu, Yung-Chun"' showing total 7 results
Start Over Author "Wu, Yung-Chun" Publisher mdpi ag
7 results on '"Wu, Yung-Chun"'

7. Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO 2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application.

Author

Yan SC, Wu CH, Sun CJ, Lin YW, Yao YJ, and Wu YC

Abstract

Ferroelectric fin field-effect transistors with a trench structure (trench Fe-FinFETs) were fabricated and characterized. The inclusion of the trench structures improved the electrical characteristics of the Fe-FinFETs. Moreover, short channel effects were suppressed by completely surrounding the trench channel with the gate electrodes. Compared with a conventional Fe-FinFET, the fabricated trench Fe-FinFET had a higher on-off current ratio of 4.1 × 10 7 and a steep minimum subthreshold swing of 35.4 mV/dec in the forward sweep. In addition, the fabricated trench Fe-FinFET had a very low drain-induced barrier lowering value of 4.47 mV/V and immunity to gate-induced drain leakage. Finally, a technology computer-aided design simulation was conducted to verify the experimental results.

Published
2022
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