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In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer. The strongly polarized and ultra-thin AlN sub-barrier and the InAlN sub-barrier are great candidates. In this article, the two epitaxial structures, AlGaN/GaN/AlN/GaN (sub-AlN) HEMTs and AlGaN/GaN/InAlN/GaN (sub-InAlN) HEMTs, were compared to select a more suitable sub-barrier layer. Through TEM images of the InAlN barrier layer, the segregation of In components can be seen, which decreases the mobility of the second channel. Thus, the sub-AlN HEMTs have a higher output current density and transconductance than those of the sub-InAlN HEMTs. Because the high-quality AlN barrier layer shields the gate leakage current, a 294 V breakdown voltage was achieved by the sub-AlN HEMTs, which is higher than the 121 V of the sub-InAlN HEMTs. The current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) of the sub-AlN HEMTs are higher than that of the sub-InAlN HEMTs from low to high bias voltage. The power-added efficiency (PAE) and output power density (Pout) of the sub-AlN HEMTs are 57% and 11.3 W/mm at 3.6 GHz and 50 V of drain voltage (Vd), respectively. For the sub-InAlN HEMTs, the PAE and Pout are 41.4% and 8.69 W/mm, because of the worse drain lag ratio. Thus, the Pout of the sub-AlN HEMTs is higher than that of the sub-InAlN HEMTs.

Immunoassays have been widely used for the determination of various analytes in the fields of disease diagnosis, food safety, and environmental monitoring. Dual-signal immunoassays are now advanced and integrated detection technologies with excellent self-correction and self-validation capabilities. In this work, we summarize the recent advances in the development of optical and electrochemical dual-signal immunoassays, including colorimetric, fluorescence, surface-enhanced Raman spectroscopy (SERS), electrochemical, electrochemiluminescence, and photoelectrochemical methods. This review particularly emphasizes the working principle of diverse dual-signal immunoassays and the utilization of dual-functional molecules and nanomaterials. It also outlines the challenges and prospects of future research on dual-signal immunoassays.

GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm2/mg) and Bi ion (LET = 98 MeV·cm2/mg) were used to irradiate Cascode GaN power devices by heavy ion accelerator experimental device. The differences of SEE under three conditions: pre-applied electrical stress, different LET values, and gate voltages are studied, and the related damage mechanism is discussed. The experimental results show that the pre-application of electrical stress before radiation leads to an electron de-trapping effect, generating defects within the GaN device. These defects will assist in charge collection so that the drain leakage current of the device will be enhanced. The higher the LET value, the more electron–hole pairs are ionized. Therefore, the charge collected by the drain increases, and the burn-out voltage advances. In the off state, the more negative the gate voltage, the higher the drain voltage of the GaN HEMT device, and the more serious the back-channel effect. This study provides an important theoretical basis for the reliability of GaN power devices in radiation environments.

Passivation is commonly used to suppress current collapse in AlGaN/GaN HEMTs. However, the conventional PECV-fabricated SiNx passivation layer is incompatible with the latest process, like the “passivation-prior-to-ohmic” method. Research attention has therefore turned to high-temperature passivation schemes. In this paper, we systematically investigated the differences between the SiNx/GaN interface of two high-temperature passivation schemes, MOCVD-SiNx and LPCVD-SiNx, and investigated their effects on the ohmic contact mechanism. By characterizing the device interface using TEM, we reveal that during the process of MOCVD-SiNx, etching damage and Si diffuses into the semiconductor to form a leakage path and reduce the breakdown voltage of the AlGaN/GaN HEMTs. Moreover, N enrichment at the edge of the ohmic region of the LPCVD-SiNx device indicates that the device is more favorable for TiN formation, thus reducing the ohmic contact resistance, which is beneficial to improving the PAE of the device. Through the CW load-pull test with drain voltage VDS = 20V, LPCVD-SiNx devices obtain a high PAE of 66.35%, which is about 6% higher than MOCVD-SiNx devices. This excellent result indicates that the prospect of LPCVD-SiNx passivation devices used in 5G small terminals will be attractive.

A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a different state, different incidence position, different drain voltage, different LET values, and a different incidence angle on the single-event transient effect of GaN HEMT are simulated. LET stands for the linear energy transfer capacity of a particle, which refers to the amount of energy transferred by the particle to the irradiated substance on the unit path. The simulation results show that for GaN HEMTs, the single-event transient effect is more obvious when the device is in off-state than in on-state. The most sensitive location of GaN HEMTs to the single-event effect is in the region near the drain. The peak transient current increases with the increase in the drain bias and incident ion LET values. The drain charge collection time increases with the angle of incidence of heavy ion.

It is of great importance to have sensitive and accurate detection of cis-diol-containing biologically related substances because of their important functions in the research fields of metabolomics, glycomics, and proteomics. Boronic acids can specifically and reversibly interact with 1,2- or 1,3-diols to form five or six cyclic esters. Based on this unique property, boronic acid-based materials have been used as synthetic receptors for the specific recognition and detection of cis-diol-containing species. This review critically summarizes the recent advances with boronic acid-based materials as recognition elements and signal labels for the detection of cis-diol-containing biological species, including ribonucleic acids, glycans, glycoproteins, bacteria, exosomes, and tumor cells. We also address the challenges and future perspectives for developing versatile boronic acid-based materials with various promising applications.

In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated. It was found that the peak value of the transconductance (Gm), current gain cut-off frequency (fT) and power gain cut-off frequency (fmax) of the TGN-devices were larger than that of the DGN-devices because of the enhanced gate control from the top gate. Although the TGN-devices and DGN-devices demonstrated flattened transconductance, fT and fmax profiles, the first and second transconductance derivatives of the DGN-devices were lower than those of the TGN-devices, implying an improvement in linearity. With the nanochannel width decreased, the peak value of the transconductance and the first and second transconductance derivatives increased, implying the predominant influence of sidewall gate capacitance on the transconductance and linearity. The comparison of gate capacitance for the TGN-devices and DGN-devices revealed that the gate capacitance of the tri-gate structure was not simply a linear superposition of the top planar gate capacitance and sidewall gate capacitance of the dual-gate structure, which could be attributed to the difference in the depletion region shape for tri-gate and dual-gate structures.

In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software. The results show that, compared to the conventional device structure, the introduction of a P-type GaN buried layer greatly weakens the peak of the channel electric field between the gate and drain of the device. This leads to a more uniform electric field distribution, a substantial reduction in the lattice temperature of the device, and a more uniform temperature distribution. Therefore, the phenomenon of negative resistance caused by self-heating effect is significantly mitigated, while the breakdown performance of the device is also notably enhanced.

Biosensors show promising prospects in the assays of various targets due to their advantages of high sensitivity, good selectivity and rapid response. Molecular recognition is a key event of biosensors, which usually involves the interaction of antigen–antibody, aptamer–target, lectin–sugar, boronic acid–diol, metal chelation and DNA hybridization. Metal ions or complexes can specifically recognize phosphate groups in peptides or proteins, obviating the use of biorecognition elements. In this review, we summarized the design and applications of biosensors with metal ion–phosphate chelation interaction for molecular recognition. The sensing techniques include electrochemistry, fluorescence, colorimetry and so on.

Heterogeneous protease biosensors show high sensitivity and selectivity but usually require the immobilization of peptide substrates on a solid interface. Such methods exhibit the disadvantages of complex immobilization steps and low enzymatic efficiency induced by steric hindrance. In this work, we proposed an immobilization-free strategy for protease detection with high simplicity, sensitivity and selectivity. Specifically, a single-labeled peptide with oligohistidine-tag (His-tag) was designed as the protease substrate, which can be captured by a nickel ion-nitrilotriacetic acid (Ni-NTA)-conjugated magnetic nanoparticle (MNP) through the coordination interaction between His-tag and Ni-NTA. When the peptide was digested by protease in a homogeneous solution, the signal-labeled segment was released from the substrate. The unreacted peptide substrates could be removed by Ni-NTA-MNP, and the released segments remained in solution to emit strong fluorescence. The method was used to determine protease of caspase-3 with a low detection limit (4 pg/mL). By changing the peptide sequence and signal reporters, the proposal could be used to develop novel homogeneous biosensors for the detection of other proteases.

With the rapid progress of artificial intelligence, various perception networks were constructed to enable Internet of Things (IoT) applications, thereby imposing formidable challenges to communication bandwidth and information security. Memristors, which exhibit powerful analog computing capabilities, emerged as a promising solution expected to address these challenges by enabling the development of the next-generation high-speed digital compressed sensing (CS) technologies for edge computing. However, the mechanisms and fundamental properties of memristors for achieving CS remain unclear, and the underlying principles for selecting different implementation methods based on various application scenarios have yet to be elucidated. A comprehensive overview of memristor-based CS techniques is currently lacking. In this article, we systematically presented CS requirements on device performance and hardware implementation. The relevant models were analyzed and discussed from the mechanism level to elaborate the memristor CS system scientifically. In addition, the method of deploying CS hardware using the powerful signal processing capabilities and unique performance of memristors was further reviewed. Subsequently, the potential of memristors in all-in-one compression and encryption was anticipated. Finally, existing challenges and future outlooks for memristor-based CS systems were discussed.

Clematis is a perennial ornamental vine known as the “Vine Queen” for its gorgeous floral color and rich flower shape. Clematis tientaiensis, an endangered plant, is a key protected wild plant and a rare breeding parent of Clematis because of its extremely high ornamental value. Light environment is one of the important environmental factors affecting the space distribution and the size of C. tientaiensis population. One-year-old homogenous and healthy potted C. tientaiensis plants were grown under four different light intensities (T1: 1800 ± 30/0 µmol m−2 s−1; T2: 1500 ± 30/0 µmol m−2 s−1; T3: 1200 ± 30/0 µmol m−2 s−1; T4: 900 ± 30/0 µmol m−2 s−1). This study analyzed the potential adaptive mechanism of C. tientaiensis in response to irradiance by investigating the photosynthesis, rapid light curve, chloroplast ultrastructure, Rubisco activase enzyme (RAC), Rubisco enzyme, amino acids, and gene expression under four irradiance treatments. High light caused the leaves chlorosis and yellowing, reduced the net photosynthetic rate (Pn), stomatal conductance (Gs), RAC and Rubisco enzyme activity; the quantum yield of unregulated energy dissipation [Y(NO)], and increased the content of eight amino acids content. The expression of psbA, psbB, psbC, and Psb(OEC) were down-regulated with decreasing irradiance. The results showed that C. tientaiensis plants grown under T1 (1800 ± 30 µmol m−2 s−1) irradiance were in danger of absorbing more light energy than they could use for photosynthesis, while they exhibited good adaptability to the T3 (1200 ± 30 µmol m−2 s−1) irradiance, and the PSII reaction center and Rubisco and RCA enzymes could be the key points in response to high light stress, which also emphasized the importance of appropriate light management practices for promoting the growth and population expansion of C. tientaiensis.

In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position and concentration of the acceptor traps in the buffer layer. The results show that with the increase of trap concentration, the traps capture electrons and reduce the off-state leakage current, which can improve breakdown voltage of the devices. At the same time, as the trap concentration increases, the ionized traps make a high additional electric field near the drain edge, leading to the decrease of breakdown voltage. With the combined two effects above, the breakdown voltage almost ultimately saturates. When the source-to-gate (Access-S) region in the GaN buffer layer is doped alone, the minimum and most linear leakage current for the same trap concentrations are obtained, and the additional electric field has a relatively small effect on the electric field peak near the drain as the ionized traps are furthest from drain. All these factors make the breakdown voltage increase more controllably with the Access-S region doping, and it is a more potential way to improve the breakdown performance.

Clematis tientaiensis is an ornamental plant with beautiful flowers that belongs to the Ranunculaceae family. C. tientaiensis is endemic to Zhejiang Province in China. Five different colours of the C. tientaiensis flower have been observed, and to explore the reason for this flower colour variation, transcriptome and metabolome sequencing analyses were conducted in this study. The results indicate that 32 metabolites participate in anthocyanin biosynthesis, and that 24 metabolites were differentially accumulated among the five different flower colours. The transcriptome sequencing results enabled the identification of 13,559 differentially expressed genes. Further analysis indicated that cyanidin-3-O-galactosidea and cyanidin-3-O-sophoroside promote anthocyanin accumulation in the flowers of C. tientaiensis, whereas the pelargonidin-3-O-galactoside plays a negative role in anthocyanin synthesis. In addition, a combined transcriptome and metabolome analysis showed that the WDR2 gene plays an important regulatory role in anthocyanin biosynthesis. The results of this study provide a basis for further research into the biosynthesis and regulation of anthocyanins in C. tientaiensis flowers.

The combined effect of total ionizing dose (TID) and electrical stress is investigated on NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage shift is smaller than those only bearing electrical stress, indicating that the combined effect alleviates the degradation of the devices. The H bond is broken during the radiation process, which reduces the participation of H atoms in the later stage of electrical stress, thereby reducing the degradation caused by electrical stress. The positive charges of the oxide layer generated by radiation neutralize part of the tunneling electrons caused by electrical stress, and consume some of the electrons that react with the H bond, resulting in weaker degradation. In addition, the positive charges in shallow trench isolation (STI) generated by radiation create parasitic leakage paths at the interfaces of STI/Si, which increase the leakage current and reduce the positive shift of the threshold voltage. The parasitic effect generated by the positive charges of STI makes the threshold voltage of the narrow-channel device degrade more, and due to the gate edge effect, the threshold voltage of short-channel devices degrades more.

Nanocatalysts are a promising alternative to natural enzymes as the signal labels of electrochemical biosensors. However, the surface modification of nanocatalysts and sensor electrodes with recognition elements and blockers may form a barrier to direct electron transfer, thus limiting the application of nanocatalysts in electrochemical immunoassays. Electron mediators can accelerate the electron transfer between nanocatalysts and electrodes. Nevertheless, it is hard to simultaneously achieve fast electron exchange between nanocatalysts and redox mediators as well as substrates. This work presents a scheme for the design of electrochemical immunosensors with nanocatalysts as signal labels, in which pyrroloquinoline quinone (PQQ) is the redox-active center of the nanocatalyst. PQQ was decorated on the surface of carbon nanotubes to catalyze the electrochemical oxidation of tris(2-carboxyethyl)phosphine (TCEP) with ferrocenylmethanol (FcM) as the electron mediator. With prostate-specific antigen (PSA) as the model analyte, the detection limit of the sandwich-type immunosensor was found to be 5 pg/mL. The keys to success for this scheme are the slow chemical reaction between TCEP and ferricinum ions, and the high turnover frequency between ferricinum ions, PQQ. and TCEP. This work should be valuable for designing of novel nanolabels and nanocatalytic schemes for electrochemical biosensors.

Clematis florida is a popular ornamental vine species known for diverse colors and shapes of its flowers but not for scent. Here we investigated the composition and biosynthesis of floral scent in ‘Kaiser’, a fragrant cultivar of C. florida that has sterile flowers. Volatile profiling revealed that flowers of ‘Kaiser’ emit more than 20 compounds, with monoterpenes being most abundant. Among the three floral organs, namely sepals, transformed-petals, and ovaries, ovaries had the highest rates of total volatile emission. To determine the molecular mechanism underlying floral scent biosynthesis in ‘Kaiser’, we sequenced a flower transcriptome and searched the transcriptome for terpene synthase genes (TPSs), which are key genes for terpene biosynthesis. Among the TPS genes identified, three were putative intact full-length genes and were designated CfTPS1, CfTPS2, and CfTPS3. Phylogenetic analysis placed CfTPS1, CfTPS2, and CfTPS3 to the TPS-g, TPS-b, and TPS-a subfamily, respectively. Through in vitro enzyme assays with Escherichia coli-expressed recombinant proteins, both CfTPS1 and CfTPS2 were demonstrated to catalyze the conversion of geranyl diphosphate to linalool, the most abundant constituent of C. florida floral scent. In addition, CfTPS1 and CfTPS2 produced the sesquiterpene nerolidol from (E,E)-farnesyl diphosphate. CfTPS3 showed sesquiterpene synthase activity and produced multiple products in vitro. All three CfTPS genes showed higher levels of expression in sepals than those in transformed-petals and ovaries. Our results show that despite being sterile, the flowers of ‘Kaiser’ have normal mechanisms for floral scent biosynthesis that make the flowers fragrant.

A new green-emitting fluorescent probe 1 was developed for biothiol detection. The sensing mechanism was considered to be biothiol-induced cleavage of the 2,4-dinitrobenzene- sulfonate group in probe 1 and resulting inhibition of the probe’s photoinduced electron transfer (PET) process. Probe 1 exhibited favorable properties such as excellent selectivity, highly sensitive (0.12 µM), large Stokes shift (117 nm) and a remarkable turn-on fluorescence signal (148-fold). Furthermore, confocal fluorescence imaging indicated that probe 1 was membrane-permeable and suitable for visualization of biothiols in living A549 cells.