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In this paper, we demonstrate an active switching of extremely high Q-factor Fano resonances using vanadium oxide (VO2)-implanted THz asymmetric double C-shaped metamaterial (MM) structures. The simulation results indicate the highly temperature-sensitive nature of the double Fano resonances that can be switched at very low external thermal pumping (68 &deg, C), which is only slightly higher than room temperature. We employ the surface current and electric field distributions of the structure to analyze the physical mechanism of the observed switching behavior in the thermally excited Fano MMs. More importantly, by optimizing the asymmetric parameter (offset length), the linewidth of the Fano resonance can reach only 0.015 THz and the Q-factor is as high as 98, which is one order of magnitude higher than that of the traditional MMs. The findings of this work would enable a thermally-induced high-Q Fano resonance MMs for ultra-sensitive sensors, modulators, low threshold switching in metadevices.