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Thin film of high purity (99.999 %) Cd1-xZnxTe (where x =0.02, 0.04, 0.06, 0.08) was prepared by high vacuum technique (HVTx10-6 Torr), on glass substrates at different substrate temperatures. The film deposited at lower temperature was annealed for one hour in vacuum of 5x10-3 torr at as-deposited to 300K. Structural investigation has been carried out using the X-ray diffraction technique. Scanning electron microscopy have been used to study the morphological behaviour of the thin films. At the lower deposition temperature the film represents amorphous nature but with increasing value of x the film exhibits polycrystalline nature. The SEM indicate that in amorphous state the surfaces are non uniform but at higher annealing temperature the film surfaces are uniform. Effect of annealing on carrier concentration and Hall mobility has been studied. From the Hall effect study various electrical parameters have been estimated. [ABSTRACT FROM AUTHOR]

ZnTe nanoparticles have been synthesized by chemical synthesis method, which is based on the chemical replacement reaction between the chemical compounds. Structural analysis of ZnTe nanoparticles has been performed by using x-ray diffraction techniques. It has been found that the average particle size is 2.6 nm using uv-vis spectroscopy. DC and AC electrical conductivities of ZnTe nanoparticles have been studied. Conduction mechanism is described in brief. The activation energies have also been determined. The results indicate that ZnTe behaves as a semiconducting material. [ABSTRACT FROM AUTHOR]