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Generation and control of short pulse is desired for ultrafast applications. Here the authors demonstrate ultrafast pulse generation using self-evolving photonic crystal that can transition from high loss to low loss state based on dynamic dispersion compensation.

Short-wavelength lasers based on wide-bandgap GaN photonic crystals are promising for high-brightness illumination and materials processing. Here, the authors develop a nano-fabrication method for GaN/air photonic crystals, achieving high lasing operation performance in terms of output power, beam quality, and low threshold current.

Here, the authors analytically derive the general conditions for 100-W-to-1-kW-class single-mode operation in ultra-large-area (3~10 mm) photonic crystal lasers. Such high power single-mode semiconductor lasers will bring innovation to a wide variety of fields.

Beam scanning lasers are required for systems for smart mobility, object recognition, and adaptive illuminations. The authors demonstrate dually modulated photonic crystals, wherein the positions and sizes of the photonic-crystal lattice points are modulated simultaneously, to achieve mechanical-free, 2D beam scanning.