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Abstract Magnetization in a ferromagnetic layer could be manipulated by the spin-orbit torque whose generation commonly relies on the spin-orbit coupling from the adjacent heavy-metal layer within the bilayer. The fact that the magnetic topological insulator possesses both the ferromagnetic order with perpendicular anisotropy and inherent spin-orbit coupling inspires to realize such a torque-induced magnetization switching without forming any heterostructure with other materials. Here, only using a single layer of magnetically-doped topological insulator Cr:(Bi,Sb)2Te3, we realize a magnetization switching only by applying a large dc current. Assisted by the magnetic history, such a switching behaves nonvolatile under zero field but becomes volatile otherwise, as consistently shown by magnetoelectric transports and magneto-optical Kerr effect measurements. Static and quasistatic current are found to be equivalent for the switching. We propose that this switching may associate with the torque resulted from the spin-orbit coupling and the compositional asymmetry in the Cr-profile of the single layer.

Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension.

The Berezinskii-Kosterlitz-Thouless topological phase transition has been observed in various systems, and involves vortex-antivortex pairs binding/un-binding. Here, such a transition is observed in a 2D ferromagnetic quantum anomalous Hall insulator film, revealed by temperature-dependent magneto-electrical transport measurements.

The spin-orbit torque (SOT) induced magnetic switching makes metal/magnetic insulators bilayers preferred in the energy efficient spintronic applications. Here the authors show SOT switching in W/TmIG bilayers and reveal the dimension crossover of SOT as a function of TmIG thickness.

Spin-polarized carriers could show an extra Hall component when moving through certain real-space topological spin textures. Here, He et al. report an exchange bias experienced by the topological spin textures living at the interface between a topological insulator and an adjacent antiferromagnet, suggesting a chiral spin texture is induced.