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Abstract The integration of 2D materials into future applications relies on advances in their quality and production. We here report a synthesis method that achieves ultrahigh optoelectronic performance at unprecedented fabrication scales. A mediator-assisted chemical vapor deposition process yields tungsten-disulfide (WS2) with near-unity photoluminescence quantum yield, superior photosensitivity and improved environmental stability. This enhancement is due to the decrease in the density of lattice defects and charge traps brought about by the self-regulating nature of the growth process. This robustness in the presence of precursor variability enables the high-throughput growth in atomically confined stacks and achieves uniform synthesis of single-layer WS2 on dozens of closely packed wafers. Our approach enhances the scientific and commercial potential of 2D materials as demonstrated in producing large-scale arrays of record-breaking optoelectronic devices.

Abstract Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. By exploiting the tunable functionality of graphene, a two-dimensional material, efficient deposition from a chemical was achieved. Ozone-generated defects in the graphene were shown to be required to enhance the morphology and quality of the material and comprehensive characterization of the seed layer and the Sb2S3 film were applied to design an optimal deposition process. The resulting material exhibits efficient carrier transport and high photodetector performance as evidenced by unprecedented responsivity and detectivity in semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 1012 Jones, respectively).