1. Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generation.
- Author
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Ollearo R, Wang J, Dyson MJ, Weijtens CHL, Fattori M, van Gorkom BT, van Breemen AJJM, Meskers SCJ, Janssen RAJ, and Gelinck GH
- Abstract
Metal halide perovskite photodiodes (PPDs) offer high responsivity and broad spectral sensitivity, making them attractive for low-cost visible and near-infrared sensing. A significant challenge in achieving high detectivity in PPDs is lowering the dark current density (J
D ) and noise current (in ). This is commonly accomplished using charge-blocking layers to reduce charge injection. By analyzing the temperature dependence of JD for lead-tin based PPDs with different bandgaps and electron-blocking layers (EBL), we demonstrate that while EBLs eliminate electron injection, they facilitate undesired thermal charge generation at the EBL-perovskite interface. The interfacial energy offset between the EBL and the perovskite determines the magnitude and activation energy of JD . By increasing this offset we realized a PPD with ultralow JD and in of 5 × 10-8 mA cm-2 and 2 × 10-14 A Hz-1/2 , respectively, and wavelength sensitivity up to 1050 nm, establishing a new design principle to maximize detectivity in perovskite photodiodes., (© 2021. The Author(s).)- Published
- 2021
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