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Non-equilibrium spin-polarized transport properties of antiferromagnetic stanene nanoribbons are theoretically studied under the combining effect of a normal electric field and linearly polarized irradiation based on the tight-binding model at room temperature. Due to the existence of spin-orbit coupling in stanene lattice, applying normal electric field leads to splitting of band degeneracy of spin-resolved energy levels in conduction and valence bands. Furthermore, unequivalent absorption of the polarized photons at two valleys which is attributed to an antiferromagnetic exchange field results in unequal spin-polarized photocurrent for spin-up and spin-down components. Interestingly, in the presence of band bending which has been induced by edge potentials, an allowable quantum efficiency occurs over a wider wavelength region of the incident light. It is especially important that the variation of an exchange magnetic field generates spin semi-conducting behavior in the bended band structure. Moreover, it is shown that optical spin-filtering effect is obtained under the simultaneous effect of uniaxial strain and narrow edge potential., (© 2023. Springer Nature Limited.)

The spin-photo current in single layer stanene and germanene under a linearly polarized light is theoretically investigated based on the tight-binding Hamiltonian combined with the nonequilibrium Green's function at room temperature. The results show that by considering the simultaneous effect of the linear illumination and a vertical external electric field without any magnetic exchange element, pure spin-photo current without charge current is generated in two-dimensional lattices with a large intrinsic spin-orbit coupling. The necessity of enhanced spin life-time for detection of spin polarization can be explained by spin-valley locking concept. Spin-valley locking arises in buckled two-dimensional materials as a result of the large spin-orbit coupling and electric-field reversible valley spin polarization. Equal absorption of the linearly illumination at both valleys with different spin polarization, leads to pure spin-photo current injection. In addition, an acceptable photoresponsivity has been reported in a broad range of photon energy. The numerical results indicate high quantum efficiency with a maximum of nearly 83% and 50% for stanene and germanene, respectively. This work may pave theoretical reference toward design of new spin-optoelectronic devices based on satanene and germanene junctions with high performance., (© 2022. The Author(s).)

Spin to pseudo-spin conversion by which the non-equilibrium normal sublattice pseudo-spin polarization could be achieved by magnetic field has been proposed in graphene. Calculations have been performed within the Kubo approach for both pure and disordered graphene including vertex corrections of impurities. Results indicate that the normal magnetic field [Formula: see text] produces pseudo-spin polarization in graphene regardless of whether the contribution of vertex corrections has been taken into account or not. This is because of non-vanishing correlation between the [Formula: see text] and [Formula: see text] provided by the co-existence of extrinsic Rashba and intrinsic spin-orbit interactions which combines normal spin and pseudo-spin. For the case of pure graphene, valley-symmetric spin to pseudo-spin response function is obtained. Meanwhile, by taking into account the vertex corrections of impurities the obtained response function is weakened by several orders of magnitude with non-identical contributions of different valleys. This valley-asymmetry originates from the inversion symmetry breaking generated by the scattering matrix. Finally, spin to pseudo-spin conversion in graphene could be realized as a practical technique for both generation and manipulation of normal sublattice pseudo-spin polarization by an accessible magnetic field in a easy way. This novel proposed effect not only offers the opportunity to selective manipulation of carrier densities on different sublattice but also could be employed in data transfer technology. The normal pseudo-spin polarization which manifests it self as electron population imbalance of different sublattices can be detected by optical spectroscopy measurements., (© 2021. The Author(s).)

The role of staggered potential on light-induced spin and pseudo-spin polarization has been investigated in silicene. It has been shown that non-equilibrium spin and pseudo-spin polarizations are emerged in silicene sheet by applying an external perpendicular electric field in the presence of circularly polarized light emission. This electric field results in pseudo-spin resolved states very close to the Dirac points therefore could be considered as a pseudomagnetic field. It has been shown that staggered potential induced spin-valley locking and pseudo-spin resolved bands are responsible for the enhancement of the spin and pseudo-spin polarizations. Meanwhile, spin-valley locking suggests a coexistence of both spin and valley polarizations with nearly identical (or at least proportional) population imbalance at low Fermi energies which could be employed for magnetic detection of the valley polarization. It has been shown that spin-valley locking results in the protection of the spin polarizations against the relaxations in elastic scattering regime. In addition, the results indicate that the pseudo-spin current can be generated by the circularly polarized light which could be explained by asymmetric light absorption of the states in k-space.

Friedel oscillations of the graphene-like materials are investigated theoretically for low and intermediate Fermi energies. Numerical calculations have been performed within the random phase approximation. It was demonstrated that for intra-valley transitions the contribution of the different Dirac points in the wave-number dependent quantities is determined by the orientation of the wave-number in k-space. Therefore, identical contribution of the different Dirac points is not automatically guaranteed by the degeneracy of the Hamiltonian at these points. Meanwhile, it was shown that the contribution of the inter-valley transitions is always anisotropic even when the Dirac points coincide with the Fermi level (E F = 0). This means that the Dirac point approximation based studies could give the correct physics only at long wave length limit. The anisotropy of the static dielectric function reveals different contribution of the each Dirac point. Additionally, the anisotropic k-space dielectric function results in anisotropic Friedel oscillations in graphene-like materials. Increasing the Rashba interaction strength slightly modifies the Friedel oscillations in this family of materials. Anisotropy of the dielectric function in k-space is the clear manifestation of band anisotropy in the graphene-like systems.

Real magnetic and lattice deformation gauge fields have been investigated in honeycomb lattice of graphene. The coexistence of these two gauges will induce a gap difference between two valley points (K and K') of system. This gap difference allows us to study the possible topological valley Hall current and valley polarization in the graphene sheet. In the absence of magnetic field, the strain alone could not generate a valley polarization when the Fermi energy coincides exactly with the Dirac points. Since in this case there is not any imbalance between the population of the valley points. In other words each of these gauges alone could not induce any topological valley-polarized current in the system at zero Fermi energy. Meanwhile at non-zero Fermi energies population imbalance can be generated as a result of the external strain even at zero magnetic field. In the context of Berry curvature within the linear response regime the valley polarization (both magnetic free polarization, Π 0 , and field dependent response function, χ α ) in different values of gauge fields of lattice deformation has been obtained.