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In Alzheimer's disease (AD), memory impairment is the most prominent feature that afflicts patients and their families. Although reactive astrocytes have been observed around amyloid plaques since the disease was first described, their role in memory impairment has been poorly understood. Here, we show that reactive astrocytes aberrantly and abundantly produce the inhibitory gliotransmitter GABA by monoamine oxidase-B (Maob) and abnormally release GABA through the bestrophin 1 channel. In the dentate gyrus of mouse models of AD, the released GABA reduces spike probability of granule cells by acting on presynaptic GABA receptors. Suppressing GABA production or release from reactive astrocytes fully restores the impaired spike probability, synaptic plasticity, and learning and memory in the mice. In the postmortem brain of individuals with AD, astrocytic GABA and MAOB are significantly upregulated. We propose that selective inhibition of astrocytic GABA synthesis or release may serve as an effective therapeutic strategy for treating memory impairment in AD., AD is the most common cause of dementia and is characterized by a progressive decline of memory and other cognitive functions (1). To date, the causes of memory impairment have [...]

A long-standing goal of CMOS-based logic devices is to meet the needs of key markets, including ultralow-power operation and high operation speed, along with the continuing miniaturization of the architecture. However, despite significant progress in their development, conventional CMOS-based devices still suffer from drawbacks such as introducing large unintended leakage currents and volatile behavior. Thus, reconfigurable logic gates based on magnetic domain (MD) have emerged as a highly promising option because they offer fast operation speeds, nonvolatility, and diverse logic functions in a single-device configuration. Here, we address multiple reconfigurable MD logic gates in a single two-channel Hall bar device by varying the voltage-driven read-current directions and selecting a non-inverting or inverting comparator in W/CoFeB/MgO/Ta stacks. The non-volatile MD switching behavior induced by spin-orbit torque significantly affects our logic gate functions, which are not necessarily synchronized to a single clock. By adapting MD switching by spin-orbit torque and anomalous Hall effect voltage outputs, we identified eight reconfigurable logic gates, including AND, NAND, NOR, OR, INH, Converse INH, Converse IMP, and IMP, in a single device. These experimental findings represent a significant step forward in a wide range of MD-based logic applications in the near future., (© 2023. The Author(s).)

We present a near-real-time global gridded daily CO 2 emissions dataset (GRACED) throughout 2021. GRACED provides gridded CO 2 emissions at a 0.1° × 0.1° spatial resolution and 1-day temporal resolution from cement production and fossil fuel combustion over seven sectors, including industry, power, residential consumption, ground transportation, international aviation, domestic aviation, and international shipping. GRACED is prepared from the near-real-time daily national CO 2 emissions estimates (Carbon Monitor), multi-source spatial activity data emissions and satellite NO 2 data for time variations of those spatial activity data. GRACED provides the most timely overview of emissions distribution changes, which enables more accurate and timely identification of when and where fossil CO 2 emissions have rebounded and decreased. Uncertainty analysis of GRACED gives a grid-level two-sigma uncertainty of value of ±19.9% in 2021, indicating the reliability of GRACED was not sacrificed for the sake of higher spatiotemporal resolution that GRACED provides. Continuing to update GRACED in a timely manner could help policymakers monitor energy and climate policies' effectiveness and make adjustments quickly., (© 2023. The Author(s).)

Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) infection is accompanied by chronic neurological sequelae such as cognitive decline and mood disorder, but the underlying mechanisms have not yet been elucidated. We explored the possibility that the brain-infiltrating SARS-CoV-2 spike protein contributes to the development of neurological symptoms observed in COVID-19 patients in this study. Our behavioral study showed that administration of SARS-CoV-2 spike protein S1 subunit (S1 protein) to mouse hippocampus induced cognitive deficit and anxiety-like behavior in vivo. These neurological symptoms were accompanied by neuronal cell death in the dorsal and ventral hippocampus as well as glial cell activation. Interestingly, the S1 protein did not directly induce hippocampal cell death in vitro. Rather, it exerted neurotoxicity via glial cell activation, partially through interleukin-1β induction. In conclusion, our data suggest a novel pathogenic mechanism for the COVID-19-associated neurological symptoms that involves glia activation and non-cell autonomous hippocampal neuronal death by the brain-infiltrating S1 protein., (© 2022. The Author(s).)

Because inflammation in osteoarthritis (OA) is related to the Toll-like receptor 4 (TLR4) signaling cascades, TLR4 is a reasonable target for developing therapeutics for OA. Thus, we investigated whether TAP2, a peptide antagonist of TLR4, reduces the monoiodoacetate (MIA)-induced arthritic pain and cartilage degradation in rats. TLR4 expression of human OA chondrocytes and synoviocytes and the knee joint tissue of MIA-induced arthritis were evaluated. MIA-induced arthritic model using Sprague-Dawley rats (6 week-old-male) were treated with TAP2, a TLR4 antagonist, and evaluated with behavioral test, immunohistochemistry, and quantitative PCR. TLR4 was highly expressed in the knee joints of patients with OA and the MIA-induced rat model. Further, a single intraarticular injection of TAP2 (25 nmol/rat) molecules targeting TLR4 on day 7 after MIA injection dramatically attenuated pain behavior for about 3 weeks and reduced cartilage loss in the knee joints and microglial activation in the spinal dorsal horns. Likewise, the mRNA levels of TNFα and IL-1β, reactive oxygen species, and the expression of MMP13 in the knee joints of TAP2-treated rats was significantly decreased by TAP2 treatment compared with the control. Moreover, interestingly, the duration of OA pain relief by TAP2 was much longer than that of chemical TLR4 antagonists, such as C34 and M62812. In conclusion, TAP2 could effectively attenuate MIA-induced arthritis in rats by blocking TLR4 and its successive inflammatory cytokines and MMP13. Therefore, TAP2 could be a prospective therapeutic to treat patients with OA.

Three-dimensional stackable memory frames involving the integration of two-terminal scalable crossbar arrays are expected to meet the demand for high-density memory storage, fast switching speed, and ultra-low power operation. However, two-terminal crossbar arrays introduce an unintended sneak path, which inevitably requires bidirectional nonlinear selectors. In this study, the advanced threshold switching (TS) features of ZnTe chalcogenide material-based selectors provide bidirectional threshold switching behavior, nonlinearity of 10 4 , switching speed of less than 100 ns, and switching endurance of more than 10 7 . In addition, thermally robust ZnTe selectors (up to 400 ℃) can be obtained through the use of nitrogen-annealing treatment. This process can prevent possible phase separation phenomena observed in generic chalcogenide materials during thermal annealing which occurs even at a low temperature of 250 ℃. The possible characteristics of the electrically and thermally advanced TS nature are described by diverse structural and electrical analyses through the Poole-Frankel conduction model.

Three-dimensional crossbar technology has been of great significance for realizing high density and multiple terabytes of data storage in memory devices. However, to further scale down the size of memory devices, a selector exhibiting nonlinear electrical properties should be in series with a memory layer in case of unwanted sneak current disturbance. Conventional selectors usually utilize a complicated multilayer structure to realize the high nonlinearity of current, which might be incompatible with certain manufacturing processes or limit the scalability of memory. Herein, we propose a simple heterojunction diode using an n-type oxide semiconductor, specifically, InGaZnO 4 (IGZO), and a p-type phase change material (PCM), specifically, N-doped Cr 2 Ge 2 Te 6 (NCrGT), to realize self-selective performance. The electrode/IGZO/NCrGT/plug-electrode structure with an IGZO/NCrGT pn diode and NCrGT/plug-electrode Schottky diode can realize bidirectional, self-selective phase change random access memory (PCRAM) for either amorphous or crystalline NCrGT. The approximate equilibrium energy band diagrams for the IGZO/NCrGT pn junction and the IGZO/NCrGT/W hybrid junction were proposed to explain the possible conduction mechanism. We demonstrated that hybrid diode-type PCM memory exhibits both selectivity and resistive switching characteristics. The present findings offer new insight into selector technology for PCM.

Electrical manipulation of magnetization states has been the subject of intense focus as it is a long-standing goal in the emerging field of spintronics. In particular, torque generated by an in-plane current with a strong spin-orbit interaction shows promise for control of the adjacent ferromagnetic state in heavy-metal/ferromagnet/oxide frames. Thus, the ability to unlock precise spin orbit torque-driven effective fields represents one of the key approaches in this work. Here, we address an in-plane direct current measurement approach as a generic alternative tool to identify spin orbit torque-driven effective fields in a full polar angle range without adopting the commonly used harmonic analyses. Our experimental results exhibited a strongly polar angular dependency of the spin orbit torque-driven effective fields observed from Ta or W/CoFeM/MgO frames.

We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R(-β), regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction.

This work reports on a mechanism for irreversible resistive switching (RS) transformation from bipolar to unipolar RS behavior in SrRuO3 (SRO)/Cr-doped SrZrO3 (SZO:Cr)/Pt capacitor structures prepared on a Ti/SiO2/Si substrate. Counter-clockwise bipolar RS memory current-voltage (I-V) characteristics are observed within the RS voltage window of -2.5 to +1.9 V, with good endurance and retention properties. As the bias voltage increases further beyond 4 V under a forward bias, a forming process occurs resulting in irreversible RS mode transformation from bipolar to unipolar mode. This switching mode transformation is a direct consequence of thermally activated Ti out-diffusion from a Ti adhesion layer. Transition metal Ti effectively out-diffuses through the loose Pt electrode layer at high substrate temperatures, leading to the unintended formation of a thin titanium oxide (TiO(x) where x < 2) layer between the Pt electrode and the SZO:Cr layer as well as additional Ti atoms in the SZO:Cr layer. Cross-sectional scanning electron microscopy, transmission electron microscopy and Auger electron spectroscopy depth-profile measurements provided apparent evidence of the Ti out-diffusion phenomenon. We propose that the out-diffusion-induced additional Ti atoms in the SZO:Cr layer contributes to the creation of the metallic filamentary channels.

ZnO is a wide band-gap semiconductor with piezoelectric properties suitable for opto-electronics, sensors, and as an electrode material. Controlling the shape and crystallography of any semiconducting nanomaterial is a key step towards extending their use in applications. Whilst anisotropic ZnO wires have been routinely fabricated, precise control over the specific surface facets and tailoring of polar and non-polar growth directions still requires significant refinement. Manipulating the surface energy of crystal facets is a generic approach for the rational design and growth of one-dimensional (1D) building blocks. Although the surface energy is one basic factor for governing crystal nucleation and growth of anisotropic 1D structures, structural control based on surface energy minimization has not been yet demonstrated. Here, we report an electronic configuration scheme to rationally modulate surface electrostatic energies for crystallographic-selective growth of ZnO wires. The facets and orientations of ZnO wires are transformed between hexagonal and rectangular/diamond cross-sections with polar and non-polar growth directions, exhibiting different optical and piezoelectrical properties. Our novel synthetic route for ZnO wire fabrication provides new opportunities for future opto-electronics, piezoelectronics, and electronics, with new topological properties.

Since graphene, a single sheet of graphite, has all of its carbon atoms on the surface, its property is very sensitive to materials contacting the surface. Herein, we report novel Raman peaks observed in annealed graphene and elucidate their chemical origins by Raman spectroscopy and atomic force microscopy (AFM). Graphene annealed in oxygen-free atmosphere revealed very broad additional Raman peaks overlapping the D, G and 2D peaks of graphene itself. Based on the topographic confirmation by AFM, the new Raman peaks were attributed to amorphous carbon formed on the surface of graphene by carbonization of environmental hydrocarbons. While the carbonaceous layers were formed for a wide range of annealing temperature and time, they could be effectively removed by prolonged annealing in vacuum. This study underlines that spectral features of graphene and presumably other 2-dimensional materials are highly vulnerable to interference by foreign materials of molecular thickness.