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2 results on '"Marvin Frauenrath"'

1. GeSnOI mid-infrared laser technology

Author

Binbin Wang, Emilie Sakat, Etienne Herth, Maksym Gromovyi, Andjelika Bjelajac, Julien Chaste, Gilles Patriarche, Philippe Boucaud, Frédéric Boeuf, Nicolas Pauc, Vincent Calvo, Jérémie Chrétien, Marvin Frauenrath, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, and Moustafa El Kurdi

Subjects
Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
Abstract

Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge0.9Sn0.1 alloy layer grown on a Ge strain-relaxed-buffer, itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation, with up to 30% vertical out-coupling efficiency. As a result, the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.

Published
2021
Full Text
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2. GeSnOI mid-infrared laser technology

Author

Jean-Michel Hartmann, Nicolas Pauc, Emilie Sakat, Frederic Boeuf, Jérémie Chrétien, Julien Chaste, Vincent Calvo, Alexei Chelnokov, Moustafa El Kurdi, Marvin Frauenrath, Vincent Reboud, Maksym Gromovyi, Andjelika Bjelajac, Binbin Wang, Gilles Patriarche, Etienne Herth, Philippe Boucaud, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), STMicroelectronics [Crolles] (ST-CROLLES), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Laboratoire Charles Fabry / Nanophotonique, Laboratoire Charles Fabry (LCF), Institut d'Optique Graduate School (IOGS)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Université Nice Sophia Antipolis (1965 - 2019) (UNS), STMicroelectronics, Département de Nanophysique (DEPHY), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and ANR-17-CE24-0015,ELEGANTE,Laser GeSn sur silicium sous pompagae électrique(2017)

Subjects
Materials science, Silicon, Silicon photonics, photonics, chemistry.chemical_element, Laser, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Article, law.invention, Semiconductor laser theory, 010309 optics, Resonator, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Applied optics. Photonics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 1234567890(), Semiconductor lasers, [PHYS]Physics [physics], business.industry, Integrated optics, QC350-467, Optics. Light, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, TA1501-1820, Microresonators, GeSn, Semiconductor, microdisks, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Whispering-gallery wave, Photonics, 0210 nano-technology, business
Abstract

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge0.9Sn0.1 alloy layer grown on a Ge strain-relaxed-buffer, itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation, with up to 30% vertical out-coupling efficiency. As a result, the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.

Published
2021
Full Text
View/download PDF

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