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Flexible optoelectronics that can be bent, wrapped, and stretched have attracted interest for wearable and mobile applications. In this work, we demonstrate a transparent 360° omnidirectional photodetector (PD) that can be stretched and wrapped around flexible or curved substrates. By embedding interlaced ZnO and Ag nanowires (NWs) in thermoplastic polyurethane via inkjet printing, the device featured > 75% transmittance in the visible region, showing high photoresponsivity and response time (10–30 A/W and 0.8 s, respectively). Moreover, the flexible PD performs well under deformation (only 9% decay in the photocurrent under 60% strain and 8% loss when the device is bent at a radius of 5 mm), which allows it to be readily applied on curved surfaces, such as skin or optical fibers. This study opens the door for the development of flexible optoelectronics that could be implemented in fiber optics, wearable electronics, self-powered systems, bio-signal monitors, and epidermal electronics. Ink-jet printed nanowire network-polymer composites enable flexible, transparent photodetectorsthat can be bent, wrapped, and stretched.A collaborative team lead by Jr-Hau He from the Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division at King Abdullah University of Science and Technology (KAUST) developed ink-jet printed 360° omnidirectional photodetectors that are fully transparent, stretchable and wrappable. The key to the device’s high degree of functionality is a polyurethane-based composite consisting of a ZnO-Ag interlaced nanowire network. Incorporating the composite into the device structure leads to photodetectors with over 75% transmittance, which enables omnidirectional photodetection with only 78% variation. The device operates under less than 5 mm bending radius and while stretched at over 60% strain, which allows the device to employed in applications such as wearable electronics.

Violet laser diode (VLD) based white-light source with high color rendering index (CRI) for lighting communication is implemented by covering with Y3Al5O12:Ce3+ (YAG:Ce) or Lu3Al5O12:Ce3+/CaAlSiN3:Eu2+ (LuAG:Ce/CASN:Eu) phosphorous diffuser plates. After passing the beam of VLD biased at 70 mA (~2I th ) through the YAG:Ce phosphorous diffuser, a daylight with a correlated color temperature (CCT) of 5068 K and a CRI of 65 is acquired to provide a forward error correction (FEC) certified data rate of 4.4 Gbit/s. By using the VLD biased at 122 mA (~3.5I th ) to excite the LuAG:Ce/CASN:Eu phosphorous diffuser with 0.85-mm thickness, a warm white-light source with a CCT of 2700 K and a CRI of 87.9 is obtained at a cost of decreasing transmission capacity to 2.4 Gbit/s. Thinning the phosphor thickness to 0.75 mm effectively reduces the required bias current by 32 mA to achieve the same CCT for the delivered white light, which offers an enlarged CRI of 89.1 and an increased data rate of 4.4 Gbit/s. Further enlarging the bias current to 105 mA remains the white-light transmission capacity at 4.4 Gbit/s but reveals an increased CCT of 3023 K and an upgraded CRI of 91.5.

Up to 18-Gbps direct encoding of blue laser diode (BLD) is demonstrated for free-space data transmission. By reshaping the orthogonal frequency multiplexed (16-QAM OFDM) stream with sidelobe filtering, the raw data rate expedites from 17.2 to 18.4 Gbps. Employing an ultrafast p-i-n photodiode with smaller active area diameter and lower noise equivalent power significantly enlarges the data rate by 1.6 Gbps or upgrades the signal-to-noise ratio (SNR) by 0.2 dB. Replacing the 80-mW BLD with the 120-mW one essentially increases the received SNR by 0.4 dB under enhanced modulation throughput. Reinforcing the beam collimation and collection by increasing the numerical aperture with a plano-convex hyper-hemispherical lens further improves the SNR by 0.6 dB. After optimization, the 16-QAM OFDM data with and without sidelobe filtering are respectively delivered at raw data rates of 16.4 and 18 Gbps with spectral-density usage efficiency as high as 4 bit/s/Hz over 16 m in free space, wherein the BLD carried QAM-OFDM data stream remains its capacity after reformation with sidelobe filtering as the superior inter-carrier-interference immunity reinforces.

An effective heat dissipation of uncooled 400-Gbps (16×25-Gbps) form-factor pluggable (CDFP) optical transceiver module employing chip-on-board multimode 25-Gbps vertical-surface-emitting-laser (VCSEL) and 25-Gbps photodiode (PD) arrays mounted on a brass metal core embedded within a printed circuit board (PCB) is proposed and demonstrated. This new scheme of the hollow PCB filling with thermally-dissipated brass metal core was simulated and used for high temperature and long term stability operation of the proposed 400-Gbps CDFP transceiver. During one-hour testing, a red-shift of central wavelength by 0.4-nm corresponding temperature increment of 6.7 °C was observed with the brass core assisted cooler module. Such a temperature change was significantly lower than that of 28.3 °C for the optical transceiver driven with conventional circuit board. After 100-m distance transmission over a multimode fiber (OM4), the 400-Gbps CDFP transceiver exhibited dispersion penalty of 2.6-dB, power budget of ≧ 3-dB, link loss of ≦ 0.63-dB, mask margin of 20%, and bit error rate (BER) of −12 with maintained stability more than one hour. The developed 400-Gbps CDFP transceiver module employing low-power consumption VCSEL and PD arrays, effective coupling lens arrays, and well thermal-dissipation brass metal core is suitable for use in the low-cost and high-performance data center applications.

To enable high-speed underwater wireless optical communication (UWOC) in tap-water and seawater environments over long distances, a 450-nm blue GaN laser diode (LD) directly modulated by pre-leveled 16-quadrature amplitude modulation (QAM) orthogonal frequency division multiplexing (OFDM) data was employed to implement its maximal transmission capacity of up to 10 Gbps. The proposed UWOC in tap water provided a maximal allowable communication bit rate increase from 5.2 to 12.4 Gbps with the corresponding underwater transmission distance significantly reduced from 10.2 to 1.7 m, exhibiting a bit rate/distance decaying slope of −0.847 Gbps/m. When conducting the same type of UWOC in seawater, light scattering induced by impurities attenuated the blue laser power, thereby degrading the transmission with a slightly higher decay ratio of 0.941 Gbps/m. The blue LD based UWOC enables a 16-QAM OFDM bit rate of up to 7.2 Gbps for transmission in seawater more than 6.8 m.

The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency and an efficiency droop of 2.48 V, 106 mW, 42.3% and 7%, respectively.