24 results on '"73.61.Ey"'
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2. Ferromagnetism and anomalous transport in GaAs doped by implantation of Mn and Mg ions
3. Phosphomolybdic acid-assisted thermal oxidation of GaAs
4. Effect of the spacer growth temperature on the electrophysical and structural properties of PHEMTs
5. The effect of spacer-layer growth temperature on mobility in a two-dimensional electron gas in PHEMT structures
6. Interference of polariton waves in structures with wide GaAs/AlGaAs quantum wells
7. Spectrum of an electron in a quantum well in high inclined magnetic field and high transverse electric field
8. Long electron spin memory times in gallium arsenide
9. Anisotropy of electronic wave functions in self-assembled InAs dots embedded in the center of a GaAs quantum well studied by magnetotunneling spectroscopy
10. Intersubband resonance polarons in Al/δ-GaAs tunneling junctions
11. Transformation of quantum size levels into virtual levels at the boundary between p-GaAs and an AlAs/GaAs superlattice
12. On the nature of the oscillations of cyclotron absorption in InAs/GaSb quantum wells
13. Electron spin resonance in GaSb-InAs-GaSb semimetal quantum wells
14. Quantum corrections to the conductance of AlGaAs/GaAs-based quasiballistic quantum wires
15. Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots
16. Electron g factor in quantum wires and quantum dots
17. On the electron mobility of δ layers in the presence of diamagnetic “ejection” of size-quantization levels
18. Near field scanning optical spectroscopy of InP single quantum dots
19. Quantum dot multiexcitons in a magnetic field
20. Dynamics of excitonic states in GaAs/AlGaAs quantum wells
21. Splitting of transverse optical phonon modes localized in GaAs quantum wires on a faceted (311)A surface
22. Nonlinear effects in a two-dimensional electron gas with a periodic lattice of scatterers
23. Elastic state of stress in narrow-gap semiconductors: A fundamental possibility to increase the quantum yield of infrared radiation
24. Features of the semiconductor-metal transition in GaAs at ultrahigh pressures: New intermediate phases
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