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We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.

We demonstrate low-voltage germanium waveguide avalanche photodetectors (APDs) with a gain × bandwidth product above 100GHz. A photonic receiver based on such a Ge APD, including a 0.13μm SiGe BiCMOS low-noise trans-impedance amplifier and a limiting amplifier, is realized. A 5.8dB sensitivity improvement is demonstrated at -5.9V bias at an avalanche gain of 6 through bit error ratio measurements. The absolute sensitivity in avalanche mode is -23.4dBm and -24.4dBm at a bit error ratio of 1 × 10(-12) and 1 × 10(-9) respectively.

A silicon dual-ring modulator consisting of two serially cascaded rings with embedded PN junctions is driven by a differential signal pair. We show by simulation and experiment that the device has advantages over the single-ring modulator in terms of optical bandwidth, 3-dB modulation bandwidth and bit rate, at the expense of a 1.7-dB increase in the transmission penalty and a twofold increase of the RF power consumption. Driven by differential pseudo random binary sequence (PRBS) signals of 0.5-V peak-to-peak voltage (Vpp), the dual-ring modulator exhibits optical bandwidths of 66 pm and 40 pm at 12.5  Gb/s and 20  Gb/s, respectively. In contrast, the single-ring modulator has an optical bandwidth of 26 pm under a single-end PRBS signal of 0.5  Vpp at 12.5  Gb/s, and its eye diagram closes if the bit rate rises to 20  Gb/s.

An analytic model is developed to study the dynamic response of carrier-depletion silicon ring modulators. Its validity is confirmed by a detailed comparison between the modeled and the measured small signal frequency response of a practical device. The model is used to investigate how to maximize the optical modulation amplitude (OMA) and how the OMA could be traded for the bandwidth by tuning the coupling strength and the operation wavelength. Our calculation shows that for a ring modulator with equal RC time constant and photon lifetime, if its operation wavelength shifts from the position of the maximum OMA towards the direction that is away from the resonance, the 3dB modulation bandwidth increases ~2.1 times with a penalty of 3 dB to the OMA.

Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.

Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22 mA/W for a 3 mm long Mach-Zehnder modulator of 2×10(18) cm(-3) doping concentration at -7.1 V bias voltage and 5.9 mA/W for a ring modulator of 1×10(18) cm(-3) doping concentration at -10 V bias voltage. The former is used to demonstrate data detection of up to 35 Gbits/s.

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

A new generation of Silicon-on-Insulator fiber-to-chip grating couplers which use a silicon overlay to enhance the directionality and thereby the coupling efficiency is presented. Devices are realized on a 200 mm wafer in a CMOS pilot line. The fabricated fiber couplers show a coupling efficiency of -1.6 dB and a 3 dB bandwidth of 80 nm.

The theory of filter synthesis using periodically coupled microring resonators is developed as a means to overcome the fabrication sensitivities inherent in conventional higher-order filters, while still achieving desirable spectral characteristics. Each resonator in the array can compensate for deficiencies in any of the others. These filters exhibit a boxlike shape and very high extinction ratios.