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Oxygen vacancies (V O ), acting as electron traps, have a significant impact on the persistent luminescence (PersL) property of persistent phosphors. However, the effect of V O on PersL remains still unclear enough to limit the development of PersL materials. In this study, the V O concentration of the Y 2.978 Ce 0.018 Yb 0.004 Al 2 Ga 3 O 12 phosphor is accurately controlled by annealing in air and 10%H 2 /90%Ar atmospheres at various temperatures. The results show as the annealing temperature increases during the air annealing the V O concentration, the PersL durations, and the thermoluminescence (TL) intensity constantly decreases, and the three data coincide well with each other, indicating the PersL property of the Y 2.978 Ce 0.018 Yb 0.004 Al 2 Ga 3 O 12 is successfully tuned. Besides, the trap structure of the Y 2.978 Ce 0.018 Yb 0.004 Al 2 Ga 3 O 12 and the charge compensation effect of Yb ions on V O defects are also discussed. By deconvoluting the TL curves, the Yb trap with a depth of 0.58 eV has been distinctly separated from the V O traps with a quasi-continuous and broad distribution of depths ranging from 0.58 to 1.21 eV. Our work demonstrates a better understanding of the relationship between V O and PersL is of great significance to design a high-performance phosphor.