Search

Microtransfer printing of silicon and lithium niobate thin films on generic integrated photonic platforms is demonstrated. An unprecedented integration yield is achieved using crack barriers as a way to mitigate stress-induced shears in the material.

We demonstrate the first on-chip resonant electro-optic frequency comb source on thin-film lithium niobate with an electrically-pumped heterogeneously integrated laser.

We demonstrate heterogeneously integrated passively mode-locked lasers by microtransfer printing III-V semiconductor optical amplifiers on a silicon nitride photonic chip. Hereby, dense and low-noise optical laser comb sources can be made.

Heterogeneous laser integration usually entails a platform-dependent process flow and design. We experimentally show a single-mode laser that can be printed on all platforms with n plat f orm = 1.7 − 2.3 without changing the design or process flow.

We demonstrate dual-comb interferometry and spectroscopy with a III-V-on-silicon passively mode- locked laser of 1-GHz repetition rate and 1-THz span. We heterodyne the on-chip device with an electro-optic modulator comb for initial assessment. (C) 2020 The Author(s)

We demonstrate a novel hybrid model for semiconductor mode-locked lasers by combining the merits of a traveling-wave model for the active regions and a split-step Fourier algorithm for the extended passive cavity.

We demonstrate electrically pumped, heterogeneously integrated lasers on thin-film lithium niobate, featuring electro-optic wavelength tunability.

Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high linear and nonlinear losses that limit the performance of these lasers. By extending such lasers with, for example, an external cavity the performance can be increased considerably. In this paper, we demonstrate for the first time that a high-performance mode-locked laser can be achieved with a butt-coupling integration technique using chip scale silicon nitride waveguides. A platform-independent SiN/SU8 coupler design is used to couple between the silicon nitride external cavity and the III/V active chip. Mode-locked lasers at 2.18 GHz and 15.5 GHz repetition rates are demonstrated with Lorentzian RF linewidths several orders of magnitude smaller than what has been demonstrated on monolithic InP platforms. The RF linewidth was 31 Hz for the 2.18 GHz laser., Submitted to Optics Express