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All-InSb film-based and spiral antenna-assisted Au-InSb-Au metal-semiconductor-metal detector is reported with dual-band photoresponse in the infrared (IR) and millimeter wave range. At IR, the detector exhibits a long wavelength 100% cut-off at 7.3 µm. Under an applied bias of 5 mA, the uncooled blackbody responsivity and specific detectivity are 3.5 A/W and 1×10 8 Jones, respectively. The f -3dB value measured at 2.94 µm is 75 KHz, corresponding to a detector rise speed of 4.7 µs. At millimeter wave range, the detector shows a narrowband response determined by the coupling of the antenna. A voltage responsivity of 25 V/W is achieved at 167 GHz (1.796 mm) under an applied bias of 25 mA, and the corresponding noise equivalent power (NEP) is 1.0×10 -10 WHz -1/2 , which can be improved to 1.8×10 -12 WHz -1/2 if normalized to the real active semiconductor area. A f -3dB value of 17.5 KHz, corresponding to a detector rise speed of 20 µs is achieved in this range. A proof of principle for IR-modulated photoresponse for millimeter wave is achieved with a maximum modulation depth of 47.5%. This All-InSb film-based detector and the modulation are promising for future novel optoelectronic devices in IR and millimeter waves.

The implementation of polarization controlling components enables additional functionalities of short-wave infrared (SWIR) imagers. The high-performance and mass-producible polarization controller based on Si metasurface is in high demand for the next-generation SWIR imaging system. In this work, we report the first demonstration of all-Si metasurface based polarizing bandpass filters (PBFs) on 12-inch wafers. The PBF achieves a polarization extinction ratio of above 10 dB in power within the passbands. Using the complementary metal-oxide-semiconductor (CMOS) compatible 193nm ArF deep ultra-violet (DUV) immersion lithography and inductively coupled plasma (ICP) etch processing line, a device yield of 82% is achieved.

Surface plasmon polaritons (SPPs) have been attracting tremendous attention in application of enhanced optoelectronic devices owing to their capability of localizing electromagnetic waves in deep subwavelength scale. We propose a plasmonic mid-infrared InAsSb-based n-i-p photodiode with electrically-controlled photocurrent enhancement achieved by controlling the overlap between SPP depth and the absorption layer, from which maximum electrically controlled enhancement factors of ~5x and ~6x have been achieved for room temperature (293 K) and 77 K operation, respectively, corresponding to electrical tuning factors of 11.9 and 26. The maximum detectivities obtained at the two temperatures are 0.8 × 10 10 Jones and 5 × 10 11 Jones, respectively. This electrically controlled enhancement expands the application capability of plasmonic photodiodes.

We report aluminum based structures for manipulation of surface plasmon polariton (SPP) propagation at short wavelength range. Our simulation shows that aluminum is a good metal to excite and propagate SPPs with blue light and that the SPP wavelength can be reduced from about 465 nm to about 265 nm by monitoring the thickness of a coated Si(3)N(4) layer above the aluminum film. It is also shown that the damping becomes more significant with the increase of the thickness of the Si(3)N(4) layer. We also experimentally demonstrated the SPP wavelength tuning effect for 20nm Si(3)N(4) layer covered Al, which can be explained by the variation of effective permittivity. The proposed Metal-Insulator-Air (MIA) structures with SPP wavelength tuning ability have potential applications in 2D optics.