1. Deep-ultraviolet photodetector based on pulsed-laser-deposited Cs3Cu2I5 films/n-Si heterojunction
- Author
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Xiaoxuan Li, Shunli He, Dan Tian, Zhiying Zhou, Chuan-Lu Yang, Xiaoyu Zhou, Lichun Zhang, Cheng Wang, Zhi-chao Ren, and Fengzhou Zhao
- Subjects
Materials science ,business.industry ,Photodetector ,Heterojunction ,Substrate (electronics) ,Specific detectivity ,Laser ,medicine.disease_cause ,Atomic and Molecular Physics, and Optics ,law.invention ,Pulsed laser deposition ,Optics ,law ,medicine ,Optoelectronics ,Thin film ,business ,Ultraviolet - Abstract
All-inorganic lead-free perovskite C s 3 C u 2 I 5 thin films were prepared using pulsed laser deposition. Effects of the substrate temperature, laser energy, and laser frequency on the film structure and optoelectronic properties were studied. A heterojunction photodetector based on C s 3 C u 2 I 5 / n − S i was constructed, and the deep-ultraviolet photoresponse was obtained. A high I l i g h t / I d a r k ratio of 130 was achieved at − 1.3 V , and the peak response of the heterojunction photodetector was 70.8 mA/W (280 nm), with the corresponding specific detectivity of 9.44 × 10 11 c m ⋅ H z 1 / 2 ⋅ W − 1 . Moreover, the device showed good stability after being exposed to air for 30 days. more...
- Published
- 2021
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