1. The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal
- Author
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G. W. C. Baker, Vishal Shah, Oliver J. Vavasour, Peter M. Gammon, Fan Li, John D. Murphy, Tianxiang Dai, Marina Antoniou, Nicholas E. Grant, A. B. Renz, Erfan Bashar, and Philip Mawby
- Subjects
TP ,Materials science ,Hydrogen ,TK ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,01 natural sciences ,Peak concentration ,Ion ,Atomic layer deposition ,X-ray photoelectron spectroscopy ,0103 physical sciences ,General Materials Science ,QC ,010302 applied physics ,T1 ,Mechanical Engineering ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Secondary ion mass spectrometry ,chemistry ,Mechanics of Materials ,0210 nano-technology ,Forming gas ,Layer (electronics) - Abstract
This letter reports on the improvement of a SiO2 layer formed by atomic layer deposition on 4H-SiC, using a post-deposition anneal in forming gas ambient. Capacitance–voltage measurements revealed good electrical properties, compared to a thermal oxide which was grown in N 2 O, with flatband voltage values averaging at -0.29 V and a low positive mobile ion charge density in the order of 1010 cm−2. XPS analysis revealed the FG annealed sample to have the most Si rich interface comparatively to other PDAs, with a C:Si ratio of 0.72, allowing more Si bonds to be terminated. SIMS analysis identified an increase in hydrogen near the interface of the FG-annealed sample with a peak concentration of 2.12 × 1021 cm−3. It is concluded that the improvement in electrical performance is due to the hydrogen passivating trap states at the SiO2/4H-SiC interface.
- Published
- 2021