30 results on '"Salii, A"'
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2. Chemical Differentiation and Gas Kinematics around Massive Young Stellar Objects in RCW 120
3. Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots
4. Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs
5. Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics
6. Selective Area Epitaxy of InP/GaInP2Quantum Dots from Metal-Organic Compounds
7. Investigation of Power IR (850 nm) Light-Emitting Diodes Manufacturing by Lift-Off Technique of AlGaAs–GaAs-Heterostructure to Carrier-Substrate
8. Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy
9. Investigation of the Photoelectric Characteristics of GaAs Solar Cells with Different InGaAs Quantum Dot Array Positioning in the i-Region
10. A GalnP-Based Photo-Converter of Laser Radiation with an Efficiency of 46.7% at a Wavelength of 600 nm
11. High-Efficiency GaInP/GaAs Photoconverters of the 600 nm Laser Line
12. High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors
13. High-Speed Photodetectors Based on InGaAs/GaAs Quantum Well–Dots
14. Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD
15. High-Speed Photodetectors for the 950–1100 nm Optical Range Based on In0.4Ga0.6As/GaAs Quantum Well-Dot Nanostructures
16. Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them
17. The Influence of the Number of Rows of GaInAs Quantum Objects on the Saturation Current of GaAs Photoconverters
18. Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters
19. Increasing the Efficiency of 520- to 540-nm Laser Radiation Photovoltaic Converters Based on GaInP/GaAs Heterostructures
20. Electrical Contacts to InP-based Structures with a Zn-doped Subcontact Layer to p-InP
21. Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities
22. In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties
23. The Spatial–Kinematic Structure of the Region of Massive Star Formation S255N on Various Scales
24. Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD
25. Study of the nature and mechanism of the formation of paramagnetic species in nickel-based Brookhart-type catalytic systems
26. Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates
27. Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs
28. Site-Controlled Growth of Single InP QDs
29. Low missing mass, single and double diffraction dissociation at the LHC
30. Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell
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