1. Investigation of the surface-potential distribution of epitaxial CdHgTe films
- Author
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Sergey A. Dvoretsky, A. V. Voitsekhovskii, V. A. Novikov, Nikolay N. Mikhailov, and D V Grigoryev
- Subjects
010302 applied physics ,Surface (mathematics) ,Materials science ,Current distribution ,business.industry ,Potential field ,Nanotechnology ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,Surfaces, Coatings and Films ,0103 physical sciences ,Microscopy ,Optoelectronics ,Rectangular potential barrier ,Crystallite ,Thin film ,0210 nano-technology ,business - Abstract
The epitaxial growth of CdHgTe films is accompanied by the formation of V defects whose density and electronic properties greatly affect the characteristics of a terminal device based on the given material. Scanning atomic-force microscopy techniques are proposed to investigate how electronic properties vary in the V-defect region of an epitaxial CdHgTe film. It is experimentally demonstrated that variations in the component composition of individual crystallites generating V defects create not only the complex spatial distribution of a potential field but also a potential barrier along the crystallite periphery. The given barrier must alter the charge-carrier exchange between crystallites, appreciably changing the current distribution over the V-defect area.
- Published
- 2016