1. Technology and electric characteristics of the field-effect hall sensor based on SOI structure
- Author
-
L. N. Dolgyi, I. Yu. Lovshenko, and Vladislav Nelayev
- Subjects
Materials science ,Manufacturing process ,Process (computing) ,Structure (category theory) ,Silicon on insulator ,Field effect ,Condensed Matter Physics ,Engineering physics ,Electronic, Optical and Magnetic Materials ,MOSFET ,Materials Chemistry ,Hall effect sensor ,Sensitivity (control systems) ,Electrical and Electronic Engineering - Abstract
Dependences of electric characteristics on the technological parameters of the field-effect Hall sensors based on SOI structures (FEHS-SOI) are discussed. The manufacturing process for the formation of a magnetosensitive structure comprising the field-effect Hall sensor based on a MOSFET in the SOI structures was simulated. Electrical characteristics of the device were calculated and the optimization research devoted to the influence of process parameters on the FEHS-SOI voltage-current characteristics and sensitivity was made.
- Published
- 2013
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