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Low-dimensional organic–inorganic metal halides have shown great application potential and new opportunities for use in solid-state lighting due to their excellent optical and electronic properties. However, the most studied hybrid compounds contain lead, which limits their application environments. The preparation of organic–inorganic metal halides with high luminous efficiency, long-term stability, and a lead-free composition for environmental protection has become an important goal for the design of materials. Here, novel Sb3+-doped indium-based metal halides, (CH3NH3)4InCl6·Cl, have been designed and synthesized via a simple mechanical ball milling method; in the lead-free zero-dimensional (0D) halide (CH3NH3)4InCl6·Cl, isolated [InCl6]3− octahedra are separated by methylamine cations. Under UV excitation, the bulk-phase powder exhibits broadband orange-yellow emission peaking at 607 nm with a full width at half-maximum of ∼160 nm upon incorporating Sb3+ into the (CH3NH3)4InCl6·Cl matrix. The photoluminescence quantum yield (PLQY) of Sb3+-doped (CH3NH3)4InCl6·Cl is as high as 67.72%. The effects of the Sb3+-doping concentration on the crystal structure and optical characteristic have been investigated. The indirect band gap characteristics of (CH3NH3)4InCl6·Cl were demonstrated via density functional theory (DFT) calculations, and the relatively wide band gaps of 3.83 eV and 2.99 eV of (CH3NH3)4InCl6·Cl and (CH3NH3)4ClInCl6:Sb3+ were experimentally determined. These experimental results suggest that the as-prepared Sb3+-doped (CH3NH3)4InCl6·Cl has potential applications in solid-state lighting devices. [ABSTRACT FROM AUTHOR]

An indium and phosphorus co-doped g-C3N4 photocatalyst (In,P-g-C3N4) was prepared by K2HPO4 post-treatment of an indium-doped g-C3N4 photocatalyst (In-g-C3N4) derived from in situ copolymerization of dicyandiamide and indium chloride. The experimental results and theoretical simulations revealed that the doped indium ions were located between the planes of g-C3N4 and phosphorus atoms were introduced into the g-C3N4 plane by replacing the carbon atoms, which existed in the form of P＝N bonds. The co-doping of indium and phosphorus with g-C3N4 not only extended its response to the visible light region but also synergistically promoted the separation and migration of photogenerated charge carriers. As a result, the In,P-g-C3N4 photocatalyst exhibited a hydrogen evolution rate as high as 4.03 mmol h−1 g−1, ca. 50 times that of pristine g-C3N4 (0.08 mmol h−1 g−1). [ABSTRACT FROM AUTHOR]