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Plasmonic hot carriers with a nonthermal distribution of kinetic energies have opened up new avenues in photovoltaics, photodetection and photocatalysis. While several articles have reported ultrafast hot electron injection from coinage metals into n-type semiconductors across Schottky barriers and efficient subsequent utilization of injected hot electrons, reports of hot hole harvesting are comparatively rare due to the difficulty in forming Schottky junctions between p-type semiconductors and high work function metals. In this work, we report the fabrication, characterization and theoretical calculations of a novel integrated multiferroic-plasmonic system comprising YMn2O5 nanowires decorated on their surface with Ag nanoparticles (NPs). A Schottky barrier for holes exists at the YMn2O5–Ag hetero-interface and hot holes are injected from Ag across this barrier. The synthesized hybrid along with bare Ag NPs were tested for Raman surface photocatalytic reduction of 4-NBT (4-nitrobenzenethiol) to DMAB (p,p′-dimercaptoazobenzene) where the composite demonstrated superior activity compared to the bare metal. Ultraviolet photoelectron spectroscopy (UPS) revealed a significantly reduced work function of the composite compared to the pristine Ag, indicative of more energetic hot electrons on the surface of the composite required for efficient photoreduction. Density functional theory (DFT)-based calculations revealed localization of molecular orbitals supportive of a possible hole transfer from YMn2O5 to Ag and a reorganization of electronic states, which promotes increased phonon-mediated sp-intraband damping of the plasmon. DFT results also indicated a purely electronic contribution to the ferroelectric polarization of YMn2O5 over and above the ionic contribution, which originated from the magnetic polarization of O2p states. [ABSTRACT FROM AUTHOR]

Misinterpretation of scanning tunnelling microscopy results yielded incorrect conclusions about the flatness of a carbon electrode substrate used for molecular electronic devices. Furthermore, the results are not supported statistically and likely not representative of materials used in numerous publications. [ABSTRACT FROM AUTHOR]

Carbon film electrodes can often be used without pretreatment, and their fabrication allows for flexibility in size and shape and for mass production. In this work, we are exploring layered structures comprised of thin films of carbon on gold (eC/Au) prepared by electron-beam evaporation. These extremely flat films are not pyrolyzed and are comprised of mainly amorphous carbon but still exhibit reasonable conductivity due to the underlying gold layer. eC/Au electrodes, without any pretreatment, yield similar heterogeneous electron-transfer rates for benchmark redox systems and significantly lower background current in comparison with polished glassy carbon. Interestingly, they show insignificant adsorption of quinones, which is uncommon for most carbon electrode materials. However, eC/Au is still prone to adsorption of airborne hydrocarbons when exposed to ambient air like most graphitic materials. With reproducibly fast electron transfer kinetics, low background current, negligible adsorption, and ultraflat surface, eC/Au films are a promising candidate for electrochemical and sensor applications. [ABSTRACT FROM AUTHOR]

It has been demonstrated that mesoscopic rates operate in nanoscale electrochemical systems and, from a fundamental point of view, are able to establish a bridge between electrochemical and molecular electronic concepts. In the present work we offer additional experimental evidence in support of this statement. [ABSTRACT FROM AUTHOR]

This paper discusses the electronic properties of molecular devices made using covalently bonded molecular layers on carbon surfaces with evaporated silicon top contacts. The Cu “top contact” of previously reported carbon/molecule/Cu devices was replaced with e-beam deposited Si in order to avoid Cu oxidation or electromigration, and provide further insight into electron transport mechanisms. The fabrication and characterization of the devices is detailed, including a spectroscopic assessment of the molecular layer integrity after top contact deposition. The electronic, optical, and structural properties of the evaporated Si films are assessed in order to determine the optical gap, work function, and film structure, and show that the electron beam evaporated Si films are amorphous and have suitable conductivity for molecular junction fabrication. The electronic characteristics of Si top contact molecular junctions made using different molecular layer structures and thicknesses are used to evaluate electron transport in these devices. Finally, carbon/molecule/silicon devices are compared to analogous carbon/molecule/metal junctions and the possible factors that control the conductance of molecular devices with differing contact materials are discussed. [ABSTRACT FROM AUTHOR]

Much of the motivation for developing molecular electronic devices is the prospect of achieving novel electronic functions by varying molecular structure. We describe a "building block" approach for molecular junctions resulting in one, two or three nanometer-thick molecular layers in a commercially proven junction design. A single layer of anthraquinone between carbon electrodes provides a tunnel device with applications in electronic music, and a second layer of a thiophene derivative yields a molecular rectifier with quite different audio characteristics. A third layer of lithium benzoate produces a redox-active device with possible applications in non-volatile memory devices or on-chip energy storage. The building block approach forms a basis for "rational design" of electronic functions, in which layers of varying structure produce distinct and desirable electronic behaviours.

The promise of molecular electronic devices stems from the possibilities offered by the rich electronic structure of organic molecules. The use of molecules as functional components in microelectronic devices has long been envisioned to augment or even replace silicon. However, the understanding of what controls charge transport in these devices involves complexities stemming from numerous variables that are often interactive and exert a controlling influence on transport, confounding the role of the molecular component. This perspective discusses various aspects of molecular electronics, from the initial "vision quests" of single molecule, functional electronic elements, to the molecular tunnel junctions that have been studied and characterized in-depth. Aspects of energy level alignment are discussed in the context of charge transport mechanisms, as are important electronic interactions when molecules are bonded to conducting "contacts". In addition, integration of molecular components with microelectronic processing is considered, as are the prospects for functional, real-world devices.

A unique molecular junction design is described, consisting of a molecular mono- or multilayer oriented between a conducting carbon substrate and a metallic top contact. The sp2 hybridized graphitic carbon substrate (pyrolyzed photoresist film, PPF) is flat on the scale of the molecular dimensions, and the molecular layer is bonded to the substrate via diazonium ion reduction to yield a strong, conjugated C-C bond. Molecular junctions were completed by electron-beam deposition of copper, titanium oxide, or aluminium oxide followed by a final conducting layer of gold. Vibrational spectroscopy and XPS of completed junctions showed minimal damage to the molecular layer by metal deposition, although some electron transfer to the molecular layer resulted in partial reduction in some cases. Device yield was high (>80%), and the standard deviations of junction electronic properties such as low voltage resistance were typically in the range of 10-20%. The resistance of PPF/molecule/Cu/Au junctions exhibited a strong dependence on the structure and thickness of the molecular layer, ranging from 0.13 ohms cm2 for a nitrobiphenyl monolayer, to 4.46 ohms cm2 for a biphenyl monolayer, and 160 ohms cm2 for a 4.3 nm thick nitrobiphenyl multilayer. Junctions containing titanium or aluminium oxide had dramatically lower conductance than their PPF/molecule/Cu counterparts, with aluminium oxide junctions exhibiting essentially insulating behavior. However, in situ Raman spectroscopy of PPF/nitroazobenzene/AlO(x)/Au junctions with partially transparent metal contacts revealed that redox reactions occurred under bias, with nitroazobenzene (NAB) reduction occurring when the PPF was biased negative relative to the Au. Similar redox reactions were observed in PPF/NAB/TiO(x)/Au molecular junctions, but they were accompanied by major effects on electronic behavior, such as rectification and persistent conductance switching. Such switching was evident following polarization of PPF/molecule/TiO2/Au junctions by positive or negative potential pulses, and the resulting conductance changes persisted for several minutes at room temperature. The "memory" effect implied by these observations is attributed to a combination of the molecular layer and the TiO2 properties, namely metastable "trapping" of electrons in the TiO2 when the Au is negatively biased.