Search

Si-doped In2O3(ZnO)3superlattice nanobelts were synthesized viachemical vapor deposition. The transmission electron microscopy result indicates that the nanobelts have a superlattice structure. The introduced Si in In2O3(ZnO)3nanobelts could exist as SiZnas donor dopants, leading to a low resistivity of 6.25 × 10−3Ω cm. The transport properties of the nanobelts were measured. A nonlinear I–Vcharacteristic is found in a voltage span of 0.4–1.5 V, which is likely attributed to the superlattice structure with statistical potential distribution around the conduction band edge. [ABSTRACT FROM AUTHOR]

Homologous compound In2−xGaxO3(ZnO)3(x 0.18) nanobelts were successfully synthesized in high yield by a simple thermal vapour method for the first time. Two sets of peaks appear in X-ray diffraction pattern. One is attributed to wurtzite ZnO, while the other is indexed to rhombohedral In2−xGaxO3(ZnO)3(x 0.18) with lattice constants a= 0.335 nm and c= 4.24 ± 0.01 nm within experimental errors. Cross-section high-resolution transmission electron microscopy observations and XRD data confirmed the formation of a planar superlattice structure in the nanobelts, which consists of alternate stacking of In–O layers and In1−xGax/Zn–O blocks along the [0001] direction, which is normal to the growth direction, leading to the (0001) plane as a surface. [ABSTRACT FROM AUTHOR]