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Epoxides are important synthetic intermediates due to their high propensity to undergo ring-opening to give a variety of products with useful functional groups. In this study, we disclose a non-halide-mediated electrochemical epoxidation of alkenes to form epoxides using water as an oxygen source. This method catalyzed by (TMP)MnCl (TMP = tetramesitylporphyrin) exhibits remarkable efficiency, enabling the epoxidation of both aromatic and aliphatic alkenes with excellent faradaic efficiencies (up to 89%). Preliminary mechanistic studies suggest the MnV＝O species generated from single electron oxidations serves as the key intermediate for the epoxidation reaction. [ABSTRACT FROM AUTHOR]

Improving the solar-to-hydrogen efficiency has always been a significant topic in the field of photocatalysis. Based on first-principles calculations, herein, we propose multiple strategies to improve the photocatalytic properties of 2D arsenic sesquichalcogenides for full water splitting. The new configurations As2STe2 and As2SeTe2 monolayers, derived from the As2Te3 monolayers by surface modification, are manifested to be typical infrared-light driven photocatalysts. Notably, under the built-in electric field, As2STe2 and As2SeTe2 monolayers can fulfil overall water splitting and the predicted solar-to-hydrogen efficiencies even reach up to 36.19% and 29.36%, respectively. The Gibbs free energy calculations indicate that the OER can be successfully driven under light irradiation. In addition, the overpotentials can provide most of the energy for HER when illuminated, especially for As2STe2 with the. In addition, both As2S3 and As2Se3 monolayers are capable of satisfying the conditions for photocatalytic water splitting. Furthermore, the band gaps of As2Se3 and As2S3 can dramatically be narrowed by increasing the number of layers and doping, respectively. These findings provide a theoretical basis for As2X3 monolayers to achieve efficient photocatalytic water splitting. [ABSTRACT FROM AUTHOR]

van der Waals heterostructures (vdWHs) open the possibility of creating novel semiconductor materials at the atomic scale that demonstrate totally new physics and enable unique functionalities, and have therefore attracted great interest in the fields of advanced electronic and optoelectronic devices. However, the interactions between metals and vdWHs semiconductors require further investigation as they directly affect or limit the advancement of high-performance electronic devices. Here we study the contact behavior of MoS2/WSe2 vdWHs in contact with a series of bulk metals using ab initio electronic structure calculations and quantum transport simulations. Our study shows that dual transmission paths for electrons and holes exist at the metal–MoS2/WSe2 hetero-bilayer interfaces. In addition, the metal-induced bandgap state (MIGS) of the original monolayer disappears due to the creation of the heterolayer, which weakens the Fermi level pinning (FLP) effect. We also find that the creation of the heterolayer causes a change in the Schottky barrier height (SBH) of the non-ohmic contact systems, whilst this does not occur so easily in the ohmic contact systems. In addition, our results indicate that when Al, Ag and Au are in contact with a MoS2/WSe2 hetero-bilayer semiconductor, a low contact barrier exists throughout the whole transmission process causing the charge to tunnel to the MoS2 layer, irrespective of whether the MoS2 is in contact with the metals as the nearest layer or as the next-nearest layer. Our work not only offers new insights into electrical contact issues between metals and hetero-bilayer semiconductors, but also provides guidance for the design of high-performance vdWHs semiconductor devices. [ABSTRACT FROM AUTHOR]

Flexible wearable sensors with multifunctional features have attracted great interest in various applications such as disease diagnosis, environmental detection and healthcare monitoring. However, it is still a challenge to achieve a multifunctional sensor with super water resistance without compromising the overall performance of the sensing material. Here, we developed a 3D bifunctional flexible sensor based on an MXene melamine sponge (MS) through a simple and effective ultrasonic mixing process and a further vacuum annealing process. The sensor is able to show excellent response to different stimuli, including pressure and humidity. The thermal annealing treatment allows MXene to adhere more firmly to the internal skeleton of the sponge, which does not easily fall off and improves the water resistance, thus achieving wearability and high sensitivity over a wide area. The T-MXene@MS sensor has a sensitivity of 9.97 kPa−1 in the 5–15 kPa range, a fast response time (180 ms), and good stability at 4000 cycles, enabling accurate monitoring of human movement. The sensor has a rich porous structure while maintaining its inherent flexibility, which allows for long term testing of human respiration as well as the ability to respond quickly to dynamic changes in humidity, demonstrating excellent long-term stability for 40 days of humidity detection. [ABSTRACT FROM AUTHOR]

Flexible piezoresistive pressure sensors have attracted a great deal of attention because of their potential applications in areas such as human motion detection and health monitoring. The attachment of conducting polymers to the surface of microstructured Polydimethylsiloxane (PDMS) thin films is one effective method of preparing flexible pressure sensors. However, enhancing the interfacial adhesion of the conductive polymer and PDMS to prevent flaking and improve performance stability is a key issue. Here, we replicated the surface of a discarded vinyl record to create a PDMS film with wrinkled microstructures, reducing manufacturing costs and enabling the use of waste. A flexible, transparent and microdefect-free polyaniline film (PANI) with a thickness of 320 nm was prepared. The protonated PANI film (PPF) was tightly adhered to the microstructured surface of the PDMS film to prepare a PPF@PDMS flexible pressure sensor. The pressure-sensitive performance of the sensor remained stable after fatigue testing of 7000 loads, which proves the strong adhesion of the two films. Based on its high sensitivity (0.24 kPa−1), low detection limit (2 Pa), and fast response capability (15 ms), the sensor can detect weak physiological behaviours (breathing, pulse) as well as large body movements (finger bending, finger pressing, etc.). Cyclic vibration waves from the engine can also be recognized. The excellent performance demonstrates the potential application of the PPFP sensor in the field of human health monitoring. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) Dirac materials have been a research hotspot due to their intriguing properties, such as high carrier mobility and ballistic charge transport. Here, we demonstrate that the B2S3 monolayer with a hexagonal structure, which has been reported as a photocatalyst, can be tuned to new 2D Dirac materials by doping atoms. The Young's modulus can reach 65.23 N m−1, indicating that the monolayer can be used as a buffer materials. The electronic structures of the pristine B2S3 monolayer show that some Dirac points appear but do not occur exactly on the Fermi level (EF). Fortunately, we find that the Dirac cone can be tuned to the EF by doping C, N, or Sn atoms. The C-doped B2S3 monolayer can be a half-metallic Dirac material, which has significant potential application in spintronics. For N- and Sn-doped B2S3 monolayers, the typical kagome bands are formed near the EF, which arise from three molecular orbitals hybridized by B, S, and N (Sn) atoms. These outstanding properties render the doped B2S3 monolayers promising 2D Dirac materials for future nanoelectronic devices. [ABSTRACT FROM AUTHOR]

Large Schottky barrier at the electric contact interface drastically hinders the performance of two-dimensional (2D) semiconductor devices, because of which it is crucial to develop better methods to achieve the ohmic contact. Recently, a new field effect transistor (FET) device was constructed by the popular 2D channel material MoS2 and an electrode material borophene was detected theoretically, but the large Schottky barrier still existed. Hence, we used surface functional groups modification on the borophene surface to regulate this Schottky barrier, based on ab initio electronic structure calculations and quantum transport simulations. Our study shows that this method makes it possible to obtain tunable metal work functions in a wide range, and the ohmic contact can still be realized. Although van der Waals (vdW) contacts were observed at all the interfaces between the 2D borophene-based metals and the monolayer MoS2, the Fermi level pinning (FLP) effect was still obvious, and existed in our proposed system with the ohmic contact. Moreover, we also discuss the origin of the FLP with varying degrees. It was found that the interface dipole and metal-induced gap states (MIGS) would be responsible for the FLP of vertical and lateral directions, respectively. More precisely, we find that the size of MIGS is dependent on the relative orientation between the functional group and metal–MoS2 interface. This work not only suggests that surface functional group modification is effective in forming ohmic contact with MoS2, but also holds some implication in the fundamental research on metal–semiconductor contacts with the vdW type. [ABSTRACT FROM AUTHOR]

A colorimetric and ratiometric probe with a push–pull chromophore dicyanoisophorone system, AuP, has been developed for the detection of Au(iii) species with highly sensitive and selective response to real-water samples and living tissues of Arabidopsis thaliana. [ABSTRACT FROM AUTHOR]

Transmembrane channels formed by functionalized hydrazide macrocycles are reported. The different pH values of buffer solutions have a significant effect on the K+/Cl− selectivity of the macrocycles. This unique transport behavior is mainly induced by the different distributions of charges in the tubular channels under various pH values. [ABSTRACT FROM AUTHOR]

van der Waals heterostructures (vdWHs) open the possibility of creating novel semiconductor materials at the atomic scale that demonstrate totally new physics and enable unique functionalities, and have therefore attracted great interest in the fields of advanced electronic and optoelectronic devices. However, the interactions between metals and vdWHs semiconductors require further investigation as they directly affect or limit the advancement of high-performance electronic devices. Here we study the contact behavior of MoS 2 /WSe 2 vdWHs in contact with a series of bulk metals using ab initio electronic structure calculations and quantum transport simulations. Our study shows that dual transmission paths for electrons and holes exist at the metal-MoS 2 /WSe 2 hetero-bilayer interfaces. In addition, the metal-induced bandgap state (MIGS) of the original monolayer disappears due to the creation of the heterolayer, which weakens the Fermi level pinning (FLP) effect. We also find that the creation of the heterolayer causes a change in the Schottky barrier height (SBH) of the non-ohmic contact systems, whilst this does not occur so easily in the ohmic contact systems. In addition, our results indicate that when Al, Ag and Au are in contact with a MoS 2 /WSe 2 hetero-bilayer semiconductor, a low contact barrier exists throughout the whole transmission process causing the charge to tunnel to the MoS 2 layer, irrespective of whether the MoS 2 is in contact with the metals as the nearest layer or as the next-nearest layer. Our work not only offers new insights into electrical contact issues between metals and hetero-bilayer semiconductors, but also provides guidance for the design of high-performance vdWHs semiconductor devices.

Two-dimensional (2D) Dirac materials have been a research hotspot due to their intriguing properties, such as high carrier mobility and ballistic charge transport. Here, we demonstrate that the B 2 S 3 monolayer with a hexagonal structure, which has been reported as a photocatalyst, can be tuned to new 2D Dirac materials by doping atoms. The Young's modulus can reach 65.23 N m -1 , indicating that the monolayer can be used as a buffer materials. The electronic structures of the pristine B 2 S 3 monolayer show that some Dirac points appear but do not occur exactly on the Fermi level ( E F ). Fortunately, we find that the Dirac cone can be tuned to the E F by doping C, N, or Sn atoms. The C-doped B 2 S 3 monolayer can be a half-metallic Dirac material, which has significant potential application in spintronics. For N- and Sn-doped B 2 S 3 monolayers, the typical kagome bands are formed near the E F , which arise from three molecular orbitals hybridized by B, S, and N (Sn) atoms. These outstanding properties render the doped B 2 S 3 monolayers promising 2D Dirac materials for future nanoelectronic devices.

Large Schottky barrier at the electric contact interface drastically hinders the performance of two-dimensional (2D) semiconductor devices, because of which it is crucial to develop better methods to achieve the ohmic contact. Recently, a new field effect transistor (FET) device was constructed by the popular 2D channel material MoS2 and an electrode material borophene was detected theoretically, but the large Schottky barrier still existed. Hence, we used surface functional groups modification on the borophene surface to regulate this Schottky barrier, based on ab initio electronic structure calculations and quantum transport simulations. Our study shows that this method makes it possible to obtain tunable metal work functions in a wide range, and the ohmic contact can still be realized. Although van der Waals (vdW) contacts were observed at all the interfaces between the 2D borophene-based metals and the monolayer MoS2, the Fermi level pinning (FLP) effect was still obvious, and existed in our proposed system with the ohmic contact. Moreover, we also discuss the origin of the FLP with varying degrees. It was found that the interface dipole and metal-induced gap states (MIGS) would be responsible for the FLP of vertical and lateral directions, respectively. More precisely, we find that the size of MIGS is dependent on the relative orientation between the functional group and metal-MoS2 interface. This work not only suggests that surface functional group modification is effective in forming ohmic contact with MoS2, but also holds some implication in the fundamental research on metal-semiconductor contacts with the vdW type.

Molecular devices with nitro groups display unique electronic transport properties in experiments. By applying the non-equilibrium Green's function combined with density functional theory, we find that the orientation of the nitro group with respect to the backbone of the molecule has a crucial effect on the device performance and can show unusual experimental phenomena. Furthermore, molecular devices with a nitro group are sensitive to gate voltage and suitable for making effective single molecular field-effect transistors. These results provide an important theoretical support to experiments and the design of future molecular devices by using nitro groups.

The electronic transport properties of an all-carbon mechanically controlled molecular device based on carbon nanotubes are studied using non-equilibrium Green's function in combination with density functional theory. A segment of (10,0) single-walled carbon nanutube (SWCNT) is placed concentrically outside a (5,0) SWCNT, namely, a (5,0)@(10,0) double-walled carbon nanotube (DWCNT). It is found that the position, orientation and length scaling of the (10,0) SWCNT have crucial effects on the electronic transport properties of the system. When the (10,0) SWCNT is mechanically pushed forward along the axial direction, alternation of on/off switching behavior under low bias and negative differential resistance behavior under high bias are observed. Significant changes in the electronic transport properties arise when rotating the (10,0) SWCNT around the common axis or adding carbon atom layers in the transport direction. Theoretical explanations are proposed for these phenomena.