Search

Resistive switching memory (RRAM) with three-dimensional (3D) integration is one of the most effective methods to satisfy the requirement of ultra-high density and ultra-large data storage. With the increase of the integration density of 3D RRAM, Joule heating effect and thermal crosstalk of the RRAM device will seriously affect the stability, reliability and life of RRAM device. Therefore, the biggest challenge for 3D RRAM is how to solve the problem of the thermal effect. Otherwise, the thermal effect will be particularly prominent as the feature size of RRAM device is ceaselessly decreased. Especially with the improving of the storage cell densities and hence the decreasing of the distance between adjacent cells, the thermal crosstalk from the adjacent cells will seriously restrict the development and application of 3D integrated RRAM. In this work, we present a new electro-thermal compact model for 3D RRAM arrays. The proposed model is based on the electro-thermal analogy which can couple thermal network to its electrical schematic. The comparison between the compact model simulation results and numerical simulation shows a good accuracy. This proposed model can be used to predict temperature distribution and analyze thermal crosstalk in 3D RRAM arrays. Our work will provide a reliable technical support for the late circuit design and practical application, and lay the foundation for the realization of the high-density 3D integration RRAM.