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Thin HfO2 films atomic layer deposited from hafnium alkyl amide and oxygen plasma were analysed using spectroscopic ellipsometry and X-ray reflectivity. Low refractive index of the material for samples with less than 30 nm thickness marks the index inhomogeneity at the first stage of growth. The transition from rising density to a more stable growth takes place at about 10 to 25 nm film thickness. HfO2 films used for resistive switching experiments demonstrate either clockwise or counterclockwise behaviour depending on the film thickness. The reason for this may be the disruption of the conductive filament at different metal-insulator interfaces, which could be favoured by several mechanisms. [ABSTRACT FROM AUTHOR]