1. Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies
- Author
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P. Barrillon, M. Vandenbroucke, Z. Chen, Roberto Cardella, F. Piro, S. Godiot, S. Bhat, Petra Riedler, Fabian Hügging, Thanushan Kugathasan, Ahmimed Ouraou, T. Hirono, C. Bespin, P. Breugnon, I. Berdalovic, Y. Degerli, Sinuo Zhang, P. Schwemling, M. Barbero, K. Moustakas, P. Pangaud, David-leon Pohl, I. Caicedo, Walter Snoeys, Hans Krüger, Norbert Wermes, P. Rymaszewski, Leyre Flores Sanz de Acedo, Tianyang Wang, Tomasz Hemperek, F. Guilloux, Jochen Dingfelder, Heinz Pernegger, Centre de Physique des Particules de Marseille (CPPM), Aix Marseille Université (AMU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Institut de Recherches sur les lois Fondamentales de l'Univers (IRFU), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay
- Subjects
semiconductor detector: technology ,CMOS sensor ,Materials science ,High energy particle ,Luminosity (scattering theory) ,Pixel ,business.industry ,integrated circuit ,Drift field ,Electronic detector readout concepts (solid-state) ,Front-end electronics for detector readout ,Particle tracking detectors ,Radiation-hard detectors ,Tracking (particle physics) ,7. Clean energy ,Charged particle ,CERN LHC Coll ,semiconductor detector: pixel ,CMOS ,electronics: readout ,Optoelectronics ,tracking detector ,[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det] ,Detectors and Experimental Techniques ,business ,activity report ,semiconductor detector: design - Abstract
International audience; The monolithic CMOS pixel sensor for charged particle tracking has already become a mainstream technology in high energy particle physics (HEP) experiments. During the last decade, progressive improvements have been made for CMOS pixels to deal with the high-radiation and high-rate environments expected, for example, at the future High Luminosity LHC. One of the key ingredients of these improvements is to achieve a fully depleted sensitive layer, where the charge collection is guided by strong drift field lines. CMOS sensors incorporating such charge collection property, often referred to as DMAPS (Depleted Monolithic Active Pixel Sensor), have been recently demonstrated in several large-scale monolithic prototypes with integrated fast readout architectures. This contribution summarizes the recent progress made on the large-scale DMPAS development, focusing on two demonstrator chips designed in the LFoundry 150 nm and the TowerJazz 150 nm CMOS processes, namely LF-Monopix1 and TJ-Monopix1.
- Published
- 2020
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