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A non-invasive optical measurement system based on a broadband light source and color filters has been developed for determining pulse rate and arterial blood oxygen saturation (SaO2). In contrast to classical pulse oximetry using red and infrared LEDs to measure the peripheral capillary oxygen saturation (SpO2), we use color filters in our system. Spectral analysis of human tissue can be easily achieved by combining a tiny color filter matrix and a commercial CMOS/CCD image sensor. During system operation, white LED light illuminates our tissue (e.g., a finger), while a CCD sensor covered by filters detects the light transmitted through that tissue. The CCD sensor is controlled by a Field Programmable Gate Array (FPGA) and a microcontroller. The detected photoplethysmographic (PPG) signal is transferred to a host computer and analyzed with MATLAB. After sensor system calibration, pulse rate and SpO2 can be simply extracted from the PPG signal. The heart rate and SpO2 of different volunteers are then measured simultaneously by commercial pulse oximetry and the proposed sensor system, in which results from both devices show good agreement. To integrate more functions into system, nanostructured color filter matrix containing 15 filters for different wavelengths is designed and fabricated. This filter can be designed to provide transmission peaks over the visible and near-infrared range (i.e., the human tissue optical transparent window) and has a high potential to be fabricated directly on top of pixels of an image sensor.

In this work, we study the optical emission from arrays of InGaN/GaN MQW nanofin and nanorod arrays with sizes ranging from a few micrometers down to sub-wavelength dimensions (i.e., nanometers). Such systems are of interest for developing arrays of single addressable nanoLEDs, which could be used to obtain a visible wavelength super-resolution microscope where the resolution is due to highly localized light spots with sub-wavelength LED-to-LED pitch. We have used commercial full-wave Maxwell solvers (COMSOL, CST) to calculate the optical field emitted from a single nanoLED in a periodic array for a wavelength of 450 nm. Simulations on 11×11 nanoLED arrays with pitches of 200 nm up to 800 nm and diameters of down to 50 nm have been conducted, in which the dependency of the emission pattern on different structural parameters is studied. In case of small nanoLED array with very narrow pitch, a large optical cross-talk between the activated LED and its neighboring pixels was found. Moreover, in presence of cross-talks, test objects smaller than the LED pitch placed on its surface with influence of near field could potentially be resolved by evaluating the varied emission patterns obtained by different pixel activations. Routes to achieve higher localized optical fields and reduce optical cross-talk have been also investigated by modifying the nanoLED array structures (e.g., by introducing filling material among the LED pixels).

A ZnO nanorods film covered silicon resonant cantilever sensor is developed for atmosphere humidity detection by monitoring the resonant frequency shifts induced by the additional weight of adsorbed water molecules. Two different crystalline seed-layer deposition methods were applied to grow different nanorods films. The morphology of the ZnO films were characterized and the sensor sensitivities were measured under different relative humidity (RH) levels. The experiments results showed that this novel humidity sensor with ZnO nanorods has a sensitivity of 101.5 ± 12.0 ppm/RH% (amount of adsorbed water of 36.9 ± 4.4 ng/RH%), indicating its potential for portable sensing applications.

The asymmetric resonance responses of a thermally actuated silicon microcantilever of a portable, cantilever-based nanoparticle detector (Cantor) is analysed. For airborne nanoparticle concentration measurements, the cantilever is excited in its first in-plane bending mode by an integrated p-type heating actuator. The mass-sensitive nanoparticle (NP) detection is based on the resonance frequency (f0) shifting due to the deposition of NPs. A homemade phase-locked loop (PLL) circuit is developed for tracking of f0. For deflection sensing the cantilever contains an integrated piezo-resistive Wheatstone bridge (WB). A new fitting function based on the Fano resonance is proposed for analysing the asymmetric resonance curves including a method for calculating the quality factor Q from the fitting parameters. To obtain a better understanding, we introduce an electrical equivalent circuit diagram (ECD) comprising a series resonant circuit (SRC) for the cantilever resonator and voltage sources for the parasitics, which enables us to simulate the asymmetric resonance response and discuss the possible causes. Furthermore, we compare the frequency response of the on-chip thermal excitation with an external excitation using an in-plane piezo actuator revealing parasitic heating of the WB as the origin of the asymmetry. Moreover, we are able to model the phase component of the sensor output using the ECD. Knowing and understanding the phase response is crucial to the design of the PLL and thus the next generation of Cantor.

An improved nanoscale processing technique by using polystyrene (PS) nanoparticles as a mask is successfully implemented to produce vertically aligned silicon nanowire (SiNW) arrays. Lithographic microstructures with different shapes and opening sizes were applied to determine the fabrication area followed by deposition of a PSS/PDDA/PSS layer. Therefore, most of the substrate areas were covered and a large-range order of PS nanoparticles can be acquired by detailed investigation of spin-coating parameters and surface properties. Afterwards, the particle size was modulated resulting in feature diameters ranging from 459 ± 9 nm down to 248 ± 11 nm. Using this as a mask for inductively coupled plasma (ICP) cryogenic dry etching, a feature-size variation of high-density SiNWs from 225 ± 18 nm to 146 ± 7 nm can be achieved. Finally, a method with simple patterning steps has been developed and tested on more than 100 samples emerging as an alternative method for reliable nanostructure realization.

Silicon microforce sensors, to be used as a transferable standard for micro force and depth scale calibrations of hardness testing instruments, are developed using silicon bulk micromachining technologies. Instead of wet chemical etching, inductively coupled plasma (ICP) cryogenic deep reactive ion etching (DRIE) is employed in the sensor fabrication process leading to more precise control of 300 μm deep structures with smooth sidewall profiles. Double meander springs are designed flanking to the boss replacing the conventional rectangular springs and thereby improving the system linearity. Two full p-SOI piezoresistive Wheatstone bridges are added on both clamped ends of the active sensors. To realize passive force sensors two spring-mass elements are stacked using glue and photoresist as joining materials. Correspondingly, although plastic deformation seems to occur when the second spring is contacted, the kink effect (i.e., abrupt increase of stiffness) is obviously observed from the first test of the passive stack sensor.

Silicon microprobe tips are fabricated and integrated with piezoresistive cantilever sensors for high-speed surface roughness scanning systems. The fabrication steps of the high-aspect-ratio silicon microprobe tips were started with photolithography and wet etching of potassium hydroxide (KOH) resulting in crystal-dependent micropyramids. Subsequently, thin conformal wear-resistant layer coating of aluminum oxide (Al 2 O 3 ) was demonstrated on the backside of the piezoresistive cantilever free end using atomic layer deposition (ALD) method in a binary reaction sequence with a low thermal process and precursors of trimethyl aluminum and water. The deposited Al 2 O 3 layer had a thickness of 14 nm. The captured atomic force microscopy (AFM) image exhibits a root mean square deviation of 0.65 nm confirming the deposited Al 2 O 3 surface quality. Furthermore, vacuum-evaporated 30-nm/200-nm-thick Au/Cr layers were patterned by lift-off and served as an etch mask for Al 2 O 3 wet etching and in ICP cryogenic dry etching. By using SF 6 /O 2 plasma during inductively coupled plasma (ICP) cryogenic dry etching, micropillar tips were obtained. From the preliminary friction and wear data, the developed silicon cantilever sensor has been successfully used in 100 fast measurements of 5- mm-long standard artifact surface with a speed of 15 mm/s and forces of 60–100 μN. Moreover, the results yielded by the fabricated silicon cantilever sensor are in very good agreement with those of calibrated profilometer. These tactile sensors are targeted for use in high-aspect-ratio microform metrology.

The development of low-cost and low-power MEMS-based cantilever sensors for possible application in hand-held airborne ultrafine particle monitors is described in this work. The proposed resonant sensors are realized by silicon bulk micromachining technology with electrothermal excitation, piezoresistive frequency readout, and electrostatic particle collection elements integrated and constructed in the same sensor fabrication process step of boron diffusion. Built-in heating resistor and full Wheatstone bridge are set close to the cantilever clamp end for effective excitation and sensing, respectively, of beam deflection. Meanwhile, the particle collection electrode is located at the cantilever free end. A 300 μm-thick, phosphorus-doped silicon bulk wafer is used instead of silicon-on-insulator (SOI) as the starting material for the sensors to reduce the fabrication costs. To etch and release the cantilevers from the substrate, inductively coupled plasma (ICP) cryogenic dry etching is utilized. By controlling the etching parameters (e.g., temperature, oxygen content, and duration), cantilever structures with thicknesses down to 10 - 20 μm are yielded. In the sensor characterization, the heating resistor is heated and generating thermal waves which induce thermal expansion and further cause mechanical bending strain in the out-of-plane direction. A resonant frequency of 114.08 ± 0.04 kHz and a quality factor of 1302 ± 267 are measured in air for a fabricated rectangular cantilever (500x100x13.5 μm3). Owing to its low power consumption of a few milliwatts, this electrothermal cantilever is suitable for replacing the current external piezoelectric stack actuator in the next generation of the miniaturized cantilever-based nanoparticle detector (CANTOR).

A closed loop circuit capable of tracking resonant frequencies for MEMS-based piezoresistive cantilever resonators is developed in this work. The proposed closed-loop system is mainly based on a phase locked loop (PLL) circuit. In order to lock onto the resonant frequency of the resonator, an actuation signal generated from a voltage-controlled oscillator (VCO) is locked to the phase of the input reference signal of the cantilever sensor. In addition to the PLL component, an instrumentation amplifier and an active low pass filter (LPF) are connected to the system for gaining the amplitude and reducing the noise of the cantilever output signals. The LPF can transform a rectangular signal into a sinusoidal signal with voltage amplitudes ranging from 5 to 10 V which are sufficient for a piezoactuator input (i.e., maintaining a large output signal of the cantilever sensor). To demonstrate the functionality of the system, a self-sensing silicon cantilever resonator with a built-in piezoresistive Wheatstone bridge is fabricated and integrated with the circuit. A piezoactuator is utilized for actuating the cantilever into resonance. Implementation of this closed loop system is used to track the resonant frequency of a silicon cantilever-based sensor resonating at 9.4 kHz under a cross-sensitivity test of ambient temperature. The changes of the resonant frequency are interpreted using a frequency counter connected to the system. From the experimental results, the temperature sensitivity and coefficient of the employed sensor are 0.3 Hz/°C and 32.8 ppm/°C, respectively. The frequency stability of the system can reach up to 0.08 Hz. The development of this system will enable real-time nanoparticle monitoring systems and provide a miniaturization of the instrumentation modules for cantilever-based nanoparticle detectors.

Vertical silicon nanowire (SiNW) resonators are designed and fabricated in order to assess exposure to aerosol nanoparticles (NPs). To realize SiNW arrays, nanolithography and inductively coupled plasma (ICP) deep reactive ion etching (DRIE) at cryogenic temperature are utilized in a top-down fabrication of SiNW arrays which have high aspect ratios (i.e., up to 34). For nanolithography process, a resist film thickness of 350 nm is applied in a vacuum contact mode to serve as a mask. A pattern including various diameters and distances for creating pillars is used (i.e., 400 nm up to 5 μm). In dry etching process, the etch rate is set high of 1.5 μm/min to avoid underetching. The etch profiles of Si wires can be controlled aiming to have either perpendicularly, negatively or positively profiled sidewalls by adjusting the etching parameters (e.g., temperature and oxygen content). Moreover, to further miniaturize the wire, multiple sacrificial thermal oxidations and subsequent oxide stripping are used yielding SiNW arrays of 650 nm in diameter and 40 μm in length. In the resonant frequency test, a piezoelectric shear actuator is integrated with the SiNWs inside a scanning electron microscope (SEM) chamber. The observation of the SiNW deflections are performed and viewed from the topside of the SiNWs to reduce the measurement redundancy. Having a high deflection of ~10 μm during its resonant frequency of 452 kHz and a low mass of 31 pg, the proposed SiNW is potential for assisting the development of a portable aerosol resonant sensor.

Nanoparticles are easily attracted by surfaces. This sticking behavior makes it difficult to clean contaminated samples. Some complex approaches have already shown efficiencies in the range of 90%. However, a simple and cost efficient method was still missing. A commonly used silicone for soft lithography, PDMS, is able to mold a given surface. This property was used to cover surface-bonded particles from all other sides. After hardening the PDMS, particles are still embedded. A separation of silicone and sample disjoins also the particles from the surface. After this procedure, samples are clean again. This method was first tested with carbon particles on Si surfaces and Si pillar samples with aspect ratios up to 10. Experiments were done using 2 inch wafers, which, however, is not a size limitation for this method.

A silicon cantilever with slender geometry based Micro Electro Mechanical System (MEMS) for nanoparticles mass detection is presented in this work. The cantilever is actuated using a piezoactuator at the bottom end of the cantilever supporting frame. The oscillation of the microcantilever is detected by a self-sensing method utilizing an integrated full Wheatstone bridge as a piezoresistive strain gauge for signal read out. Fabricated piezoresistive cantilevers of 1.5 mm long, 30 μm wide and 25 μm thick have been employed. This self-sensing cantilever is used due to its simplicity, portability, high-sensitivity and low-cost batch microfabrication. In order to investigate air pollution sampling, a nanoparticles collection test of the piezoresistive cantilever sensor is performed in a sealed glass chamber with a stable carbon aerosol inside. The function principle of cantilever sensor is based on detecting the resonance frequency shift that is directly induced by an additional carbon nanoparticles mass deposited on it. The deposition of particles is enhanced by an electrostatic field. The frequency measurement is performed off-line under normal atmospheric conditions, before and after carbon nanoparticles sampling. The calculated equivalent mass-induced resonance frequency shift of the experiment is measured to be 11.78 ± 0.01 ng and a mass sensitivity of 8.33 Hz/ng is obtained. The proposed sensor exhibits an effective mass of 2.63 μg, a resonance frequency of 43.92 kHz, and a quality factor of 1230.68 ± 78.67. These results and analysis indicate that the proposed self-sensing piezoresistive silicon cantilever can offer the necessary potential for a mobile nanoparticles monitor.