1. InAs/InP based quantum dot mode-locked semiconductor lasers at 1.5 μm
- Author
-
Francis Poingt, Alexandre Shen, B. Rousseau, F. van Dijk, Francois Lelarge, Estelle Derouin, Guang-Hua Duan, Dalila Make, Frederic Pommereau, L. Le Gouezigou, Beatrice Dagens, Alain Accard, J.-G. Provost, Olivier Drisse, Jean Landreau, O. Le Gouezigou, and Romain Brenot
- Subjects
Physics ,Laser diode ,business.industry ,Laser ,law.invention ,Semiconductor laser theory ,Laser linewidth ,Optics ,Quantum dot ,law ,Quantum dot laser ,Optoelectronics ,business ,Tunnel injection ,Quantum well - Abstract
This paper summarizes recent advances on InAs/InP mode-locked quantum dashes (QD) lasers, and their applications for all-optical clock recovery, short pulse generation and millimeter wave generation. We demonstrate that QD FP lasers, owing to the small confinement factor and the 3D quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time jitter characteristics when QD lasers are actively mode-locked. We report also on an actively mode-locking tunnel injection quantum dash Fabry-Perot laser diode at 42.7GHz, generating nearly Fourier transform limited pulses with a pulse width of 2ps over 16nm.
- Published
- 2007