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Driven by the strong need for cheap and integrable Si-based optoelectronic devices for a wide range of applications, continuing endeavors have been made to develop structures for light emission, modulation, and detection in this material system. Here, we report the realization of room-temperature stimulated emission in the technologically crucial 1.5 micron wavelength range from Er-doped GaN/AlN multiple-quantum wells on silicon and sapphire. Employing the well-acknowledged variable stripe technique, we have demonstrated an optical gain up to 170 cm-1 in the multiple-quantum well structures. The observation of the stimulated emission is accompanied by the characteristic threshold behavior of emission intensity as a function of pump fluence, spectral linewidth narrowing and excitation length. The demonstration of room-temperature lasing at the minimum loss window of optical fibers and in the eye-safe wavelength region of 1.5 micron are highly sought-after for use in many applications including defense, industrial processing, communication, medicine, spectroscopy and imaging. As the synthesis of Er-doped GaN epitaxial layers on silicon and sapphire has been successfully demonstrated, the results laid the foundation for achieving hybrid GaN-Si lasers providing a new pathway towards full photonic integration for silicon optoelectronics.

Graphene-based photodetectors have attracted attention for realizing optoelectronic devices including photodetectors. We report a graphene field effect transistor on silicon for broadband light detection from the ultraviolet to near-infrared region, which is compatible with the silicon technology and does not need a complicated fabrication process. The photodetectors show an improved responsivity. Specifically, fabricated graphene photodetectors shows a photo-responsivity of ~980 A/W at room temperature. These results provide a promising for the development of graphene-based optoelectronic applications with the broadband photodetection from the ultraviolet to near-infrared region.

Graphene-based photodetectors have attracted strong interest for realizing optoelectronic devices, including photodetectors. Here we report a simple fabrication of graphene-germanium quantum dots for broadband light detection from visible to infrared region. The photodetectors show an improved responsivity and response speed. Specifically, the fabricated germanium quantum dots on graphene photodetector shows a responsivity of 1,500 A/W at room temperature and the response time is as fast as ~ 1 ms. These results address key challenges for broadband photodetectors from visible to infrared region, and are promising for the development of graphene-based optoelectronic applications.