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We have successfully achieved accurate alignment to remove stacked TiN/Ti/Al/TiN/Ti films on damascene W marks by using laser ablation technology. Because, the Al films deposited on the damascene W marks lead to poor quality of alignment accuracy due to the asymmetric topography of the deposited Al surfaces. In the case that the TiN/Ti film is not formed on the Al surface, high-density plasma is formed above the Al surface during laser irradiation. This plasma screens off the surface from laser irradiation. Therefore, it is difficult that the naked Al films are removed completely by the laser irradiation. From the results of thermal analysis of the TiN/Ti/Al films during laser irradiation, it is concluded that the irradiation fluence should be controlled as abrupt evaporation occurs at the Al surfaces without evaporation of the top TiN/Ti films. In this condition, the plasma cannot be formed above the TiN/Ti surfaces during laser irradiation. Therefore, the irradiation energy is absorbed efficiently in the TiN/Ti films and the TiN/Ti/Al/TiN/Ti films could be removed completely by laser irradiation. The global alignment random of wafer alignment after the TiN/Ti/Al/TiN/Ti film ablation on the W marks is equal to that of the ideal W marks before the Al film deposition. These results mean that the laser ablation is the most effective technology for locally removing thin metal films on alignment marks to achieve accurate alignment.

In the tri-level resist process, it is sometimes difficult to detect the alignment mark because of the anti-reflection performance of the organic thick anti-reflective (ARL). Laser ablation in running water was one of the most effective techniques for removing the organic thick ARL on the alignment mark. Generally, the ablation process produces many particles. The results of our experiment indicate that the particle distribution area greatly depends on the dome-shape bubble on the ablation area. The particle distribution area could be minimized by optimizing some ablation conditions according to the estimated size of the dome-shape bubble. By optimizing a shift of the narrow slit-laser-beam and its energy so as to keep the ablation/initial thickness ratio to less than 20%, fine ablation area could be obtained. This novel ablation technique is very useful for particle-free selective removal of the organic thick ARL film.

Kaizen--a continuously improving--is a philosophy lived in Japan which is also becoming more and more important in Western companies. To implement this philosophy in the semiconductor industry, a high performance metrology tool is essential to determine the status of production quality periodically. An important prerequisite for statistical process control is the high stability of the metrology tool over several months or years; the tool-induced shift should be as small as possible. The pattern placement metrology tool Leitz LMS 2000 has been used in a major European mask house for several years now to qualify masks within the tightest specifications and to monitor the MEBES III and its cassettes. The mask shop's internal specification for the long term repeatability of the pattern placement metrology tool is 19 nm instead of 42 nm as specified by the supplier of the tool. Then the process capability of the LMS 2000 over 18 months is represented by an average c pk value of 2.8 for orthogonality, 5.2 for x-scaling, and 3.0 for y-scaling. The process capability of the MEBES III and its cassettes was improved in the past years. For instance, 100% of the masks produced with a process tolerance of +/- 200 nm are now within this limit.