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2. The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

Author

Massachusetts Institute of Technology. Department of Materials Science and Engineering, Massachusetts Institute of Technology. Microphotonics Center, Fitzgerald, Eugene A, Michel, Jurgen, Wang, Bing, Lee, Kwang Hong, Wang, Cong, Wang, Yue, Made, Riko I., Sasangka, Wardhana Aji, Nguyen, Viet Cuong, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, Massachusetts Institute of Technology. Department of Materials Science and Engineering, Massachusetts Institute of Technology. Microphotonics Center, Fitzgerald, Eugene A, Michel, Jurgen, Wang, Bing, Lee, Kwang Hong, Wang, Cong, Wang, Yue, Made, Riko I., Sasangka, Wardhana Aji, Nguyen, Viet Cuong, Lee, Kenneth Eng Kian, Tan, Chuan Seng, and Yoon, Soon Fatt

Abstract

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

Published
2017

3. Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates

Author

Massachusetts Institute of Technology. Department of Materials Science and Engineering, Fitzgerald, Eugene A, Wang, Bing, Wang, Cong, Lee, Kwang Hong, Bao, Shuyu, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, Michel, Jurgen, Massachusetts Institute of Technology. Department of Materials Science and Engineering, Fitzgerald, Eugene A, Wang, Bing, Wang, Cong, Lee, Kwang Hong, Bao, Shuyu, Lee, Kenneth Eng Kian, Tan, Chuan Seng, Yoon, Soon Fatt, and Michel, Jurgen

Abstract

The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials covering the visible wavelength range on Si is still challenging. We have studied epitaxial growth of red InGaP light emitting materials on engineered Ge-on-Si substrates. Ge-on-Si was grown on 8'' Si substrates in a metal organic chemical vapour deposition (MOCVD) reactor using two- step growth and cycling annealing. Threading dislocation densities (TDDs) were controlled to as low as 10⁶ /cm² by using As-doped Ge initiation. A GaAs buffer layer and lattice-matched InGaP LEDs were grown on the Ge-on-Si sequentially in the same MOCVD process and red LEDs are demonstrated. InGaP multiple-quantum-well LED structures were grown on full 8″ Ge-on-Si substrates and characterized.

Published
2017

4. The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

Author

Wang, Bing, additional, Lee, Kwang Hong, additional, Wang, Cong, additional, Wang, Yue, additional, Made, Riko I., additional, Sasangka, Wardhana Aji, additional, Nguyen, Viet Cuong, additional, Lee, Kenneth Eng Kian, additional, Tan, Chuan Seng, additional, Yoon, Soon Fatt, additional, Fitzgerald, Eugene A., additional, and Michel, Jurgen, additional

Published
2017
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6. Moire fringe method for the measurement of distortions of hot-embossed polymeric substrates

Author

Shiguang Li, Zhiguang Xu, Kamal Youcef-Toumi, Yoon Soon Fatt, Hayden Taylor, and Duane S. Boning

Subjects
Scanner, Optics, Materials science, business.industry, Orientation (computer vision), Isotropy, Process (computing), Image processing, Moiré pattern, business, Rotation (mathematics), Imagesetter
Abstract

We present a way to identify distortions of transparent micro-patterned substrates using a desktop document scanner and a set of image processing routines. The method requires neither expensive optical equipment nor precise positioning of the part. It is therefore ideally suited to rapid process monitoring. A 5000-dpi imagesetter is used to print a square reference grid of lines having a known pitch ~100 μm. This reference pattern is used to produce a hard stamp that is subsequently embossed into a sheet of thermoplastic polymer. The pattern transferred to the polymer may include distortions resulting from contraction of the sheet after separation from the stamp. To measure these distortions, the embossed polymeric part is placed on a document scanner. The reference grid is laid on top of the part and rotated by hand until moire fringes are seen. At least two scans are made, each with a different relative reference-part rotation. For each scan, the orientation of the part relative to the reference grid may be arbitrarily chosen within an allowable range of a few degrees. These orientations may be extracted from the captured images, and, together with the moire fringes' orientations and spacings, provide enough information to obtain the part's distortions. Estimates of part strains may be improved, at the expense of measurement time, by capturing more images. The approach can detect isotropic shrinkage of the part with a strain resolution ~10 -3 .

Published
2008
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7. Review of production of microfluidic devices: material, manufacturing and metrology

Author

Li, Shiguang, primary, Xu, Zhiguang, additional, Mazzeo, Aaron, additional, Burns, Daniel J., additional, Fu, Gang, additional, Dirckx, Matthew, additional, Shilpiekandula, Vijay, additional, Chen, Xing, additional, Nayak, Nimai C., additional, Wong, Eehern, additional, Yoon, Soon Fatt, additional, Fang, Zhong Ping, additional, Youcef-Toumi, Kamal, additional, Hardt, David, additional, Tor, Shu Beng, additional, Yue, Chee Yoon, additional, and Chun, Jung-Hoon, additional

Published
2008
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15. Deposition of potassium lithium niobate films by sol-gel method

Author

Zhang, Hong X., primary, Zhou, Yan, additional, Kam, Chan Hin, additional, Han, X. Q., additional, Cheng, Shi De, additional, Ooi, Boon Siew, additional, Lam, Yee Loy, additional, Chan, Yuen Chuen, additional, Sun, Zhuo, additional, Yu, M. B., additional, Shi, Xu, additional, and Yoon, Soon Fatt, additional

Published
1999
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