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Heterostructures based on the nanometer-scaled semiconductor oxides can be used as gas-sensitive receptor and transducer systems. In comparison to resistive oxide sensors, having a linear current - voltage characteristics, the sensors based on the heterostructures show non-linear current - voltage characteristics. These structures, based on the industrially developed silicon technology, promise the new remarkable capabilities for the creation of the gas- and biosensitive sensors.

A very promising way in solid-state gas and bio-sensors creation is the use of well developed silicon technology for the manufacturing of the gas sensors. It will allow to unify the processes of the sensor production with the processes of the manufacture of the information processing circuit. This approach promises the essential abatement of the cost of devices and significant advantages in creation of the matrix sensors. The metal-silicon contacts perform the certain interest in such researches because they are the cheapest among semiconductor sensors. At the same time they provide sensitivity to gas environment due to strong dependence of their characteristics on the outside environment. In this work we present results of the usage of non-linear properties of the current-voltage characteristics diode-like structures which allow to extend capabilities of the described above approach for creation new type of sensors structures.