32 results on '"DenBaars, S. P."'
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2. Identification of Carbon-related Bandgap States in GaN Grown by MOCVD
3. Similarities in the Optical Properties of Hexagonal and Cubic InGaN Quantum Wells
4. Fabrication and Characterization of GaN Junctionfield Effect Transistors
5. Polarity Determination for Mocvd Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
6. Deep levels in n-type Schottky and p+-n homojunction GaN diodes
7. Comparison Study of Structural and Optical Properties of InxGa1−xN/GaN Quantum Wells with Different In Compositions
8. Spectroscopic Studies in InGaN Quantum Wells
9. Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown
10. Influence of Si-Doping on Carrier Localization of Mocvd-grown InGaN/GaN Multiple Quantum Wells
11. Optical Characteristics of Mocvd-Grown Ingan/Gan Multiple Quantum Wells Investigated by Excitation Energy Dependent Pl and Ple Spectroscopy
12. Study of Stimulated Emission in InGaN/GaN Multi-Quantum Wells in the Temperature Range of 175 k to 575 k
13. Optical Anisotropy Studies of Sapphire by Raman Scattering and Spectroscopic Transmission Ellipsometry
14. MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode
15. Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\left( {10\overline 1 \overline 1 } \right)$$\end{document} GaN templates
16. Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure
17. Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures
18. Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe
19. Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire
20. Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
21. Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
22. Fabrication and Characterization of GaN Junctionfield Effect Transistors
23. Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures
24. Electrical transport of an AlGaN/GaN two-dimensional electron gas
25. Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells with Different in Compositions
26. Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides
27. Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures
28. Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
29. Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells
30. Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
31. Spectroscopic Studies in InGaN Quantum Wells
32. Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
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