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Your search keyword '"Tran, Minh-Quang"' showing total 9 results
Start Over Author "Tran, Minh-Quang" Publisher springer international publishing
9 results on '"Tran, Minh-Quang"'

1. Modeling of Five-Axis Ball-End Milling with Tool Orientation Effects

Author

Tran, Minh-Quang, Lien, Vu Thi, Liu, Meng-Kun, Nguyen, Thi Thanh Nga, Kacprzyk, Janusz, Series Editor, Gomide, Fernando, Advisory Editor, Kaynak, Okyay, Advisory Editor, Liu, Derong, Advisory Editor, Pedrycz, Witold, Advisory Editor, Polycarpou, Marios M., Advisory Editor, Rudas, Imre J., Advisory Editor, Wang, Jun, Advisory Editor, Nguyen, Duy Cuong, editor, Vu, Ngoc Pi, editor, Long, Banh Tien, editor, Puta, Horst, editor, and Sattler, Kai-Uwe, editor

Published
2022
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2. Knot Vector Optimization of NURBS for High Speed Cam Mechanisms Based on Dynamic Characteristics

Author

Nguyen, Thi Thanh Nga, Nguyen, Van Sy, Tran, Minh Quang, Kacprzyk, Janusz, Series Editor, Gomide, Fernando, Advisory Editor, Kaynak, Okyay, Advisory Editor, Liu, Derong, Advisory Editor, Pedrycz, Witold, Advisory Editor, Polycarpou, Marios M., Advisory Editor, Rudas, Imre J., Advisory Editor, Wang, Jun, Advisory Editor, Nguyen, Duy Cuong, editor, Vu, Ngoc Pi, editor, Long, Banh Tien, editor, Puta, Horst, editor, and Sattler, Kai-Uwe, editor

Published
2022
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3. Adaptive Energy Management in Microgrid Based on New Training Strategy for ANFIS

Author

Elsisi, M., Tran, Minh-Quang, Lien, Vu Thi, Nga, Nguyen Thi Thanh, Kacprzyk, Janusz, Series Editor, Gomide, Fernando, Advisory Editor, Kaynak, Okyay, Advisory Editor, Liu, Derong, Advisory Editor, Pedrycz, Witold, Advisory Editor, Polycarpou, Marios M., Advisory Editor, Rudas, Imre J., Advisory Editor, Wang, Jun, Advisory Editor, Nguyen, Duy Cuong, editor, Vu, Ngoc Pi, editor, Long, Banh Tien, editor, Puta, Horst, editor, and Sattler, Kai-Uwe, editor

Published
2022
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4. Analysis of Milling Chatter Vibration Based on Force Signal in Time Domain

Author

Tran, Minh-Quang, Liu, Meng-Kun, Tran, Quoc-Viet, Kacprzyk, Janusz, Series Editor, Gomide, Fernando, Advisory Editor, Kaynak, Okyay, Advisory Editor, Liu, Derong, Advisory Editor, Pedrycz, Witold, Advisory Editor, Polycarpou, Marios M., Advisory Editor, Rudas, Imre J., Advisory Editor, Wang, Jun, Advisory Editor, Sattler, Kai-Uwe, editor, Nguyen, Duy Cuong, editor, Vu, Ngoc Pi, editor, Long, Banh Tien, editor, and Puta, Horst, editor

Published
2021
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9. An Analytical Model for AlGaN/GaN MOS-HEMT for High Power Applications

Author

Nguyen-Ngoc Trung, Nguyen-Hoang Thoan, Dao Anh Tuan, Nguyen-Trung Do, and Tran Minh Quang

Subjects
Materials science, business.industry, Transconductance, Transistor, Algan gan, Electron, High-electron-mobility transistor, Power (physics), law.invention, Threshold voltage, law, Optoelectronics, business, Polarization (electrochemistry)
Abstract

We develop a physics based analytical model for AlGaN/GaN high electron mobility transistors (HEMT and MOS-HEMT) to study the I-V characteristics, current transfer characteristics, transconductance and drain-conductance. The model is modified from a model first presented by Chang and Fetterman for AlGaAs/GaAs HEMT (Chang and Fetterman in Solid-State Electron 30(5), 1987 [1], IEEE Trans Electron Dev Ed-34(I), 1987 [2]) The linear and non-linear drain currents have been separately calculated and merged them in order to evaluate the I-V characteristics. The threshold voltage has been evaluated from current transfer characteristics plot and verified from the transconductance parameter. We also consider the effect of polarization on threshold voltage of the devices. Moreover, to prove the exactness of our model, we compare our data with our experiment data for common HEMT, Hasan’s MOS-HEMT and Yoon’s HEMT with short channel.

Published
2020

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