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Emerging functionalities in two-dimensional materials, such as ferromagnetism, superconductivity and ferroelectricity, open new avenues for promising nanoelectronic applications. Here, we report the discovery of intrinsic in-plane room-temperature ferroelectricity in two-dimensional Bi2TeO5 grown by chemical vapor deposition, where spontaneous polarization originates from Bi column displacements. We found an intercalated buffer layer consist of mixed Bi/Te column as 180° domain wall which enables facile polarized domain engineering, including continuously tunable domain width by pinning different concentration of buffer layers, and even ferroelectric-antiferroelectric phase transition when the polarization unit is pinned down to single atomic column. More interestingly, the intercalated Bi/Te buffer layer can interconvert to polarized Bi columns which end up with series terraced domain walls and unusual fan-shaped ferroelectric domain. The buffer layer induced size and shape tunable ferroelectric domain in two-dimensional Bi2TeO5 offer insights into the manipulation of functionalities in van der Waals materials for future nanoelectronics. Tunability of ferroelectric domain structure is significant in ferroelectric materials. Here, the authors present in-plane ferroelectricity in 2D Bi2TeO5 in which the ferroelectric domain size and shape can be continuously tuned by the Bi/Te ratio. [ABSTRACT FROM AUTHOR]

Metal halide perovskites have gained huge research interest within few decades due to their optoelectronic applications. Recently, inorganic metal halide perovskites CsPbX3 (X = Cl, Br, I) has shown the improved stability with promising optical and electrical properties. We report the enhancement of PL intensity and the extension of carrier lifetime from strained CsPbBr3 microwires in air environment. PL intensity is enhanced more than fivefold for all the studied microwires under strain than the original. Maximum enhancement in PL intensity of more than 25-fold has been observed from a wire with lateral width of 630 nm. Based on the experiment and simulation results, we conclude that tensile strain can improve the oxygen adsorption by the defects on the surface of CsPbBr3 microwires, which will suppress the non-radiative transitions and enhance the light emission efficiency. These findings demonstrate that the strain engineering is an effective way to improve the performance of CsPbBr3 microstructures for optoelectronic applications. [ABSTRACT FROM AUTHOR]

Beyond the absence of long-range magnetic orders, the most prominent feature of the elusive quantum spin liquid (QSL) state is the existence of fractionalized spin excitations, i.e., spinons. When the system orders, the spin-wave excitation appears as the bound state of the spinon-antispinon pair. Although scarcely reported, a direct comparison between similar compounds illustrates the evolution from spinon to magnon. Here, we perform the Raman scattering on single crystals of two quantum kagome antiferromagnets, of which one is the kagome QSL candidate Cu3Zn(OH)6FBr, and another is an antiferromagnetically ordered compound EuCu3(OH)6Cl3. In Cu3Zn(OH)6FBr, we identify a unique one spinon-antispinon pair component in the E2g magnetic Raman continuum, providing strong evidence for deconfined spinon excitations. In contrast, a sharp magnon peak emerges from the one-pair spinon continuum in the Eg magnetic Raman response once EuCu3(OH)6Cl3 undergoes the antiferromagnetic order transition. From the comparative Raman studies, we can regard the magnon mode as the spinon-antispinon bound state, and the spinon confinement drives the magnetic ordering. Spinon excitations of a Kagome quantum spin liquid are expected to give rise to a magnetic continuum in Raman spectroscopy. Here, the authors report a magnetic Raman continuum in the Kagome spin liquid candidate Cu3Zn(OH)6FBr, in contrast to a sharp magnon Raman peak in the Kagome antiferromagnet EuCu3(OH)6Cl3. [ABSTRACT FROM AUTHOR]