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Diffusion-doping is an effective, practical method to improve material properties and widen material application. Here, we demonstrate a new physical phenomenon: diffusion control of an ion by another in LiNbO3 and LiTaO3 crystals. We exemplify Ti4+/Xn+ (Xn+ = Sc3+, Zr4+, Er3+) co-diffusion in the widely studied LiNbO3 and LiTaO3 crystals. Some Ti4+/Xn+-co-doped LiNbO3 and LiTaO3 plates were prepared by co-diffusion of stacked Ti-metal and Er-metal (Sc2O3 or ZrO2) films coated onto LiNbO3 or LiTaO3 substrates. The Ti4+/Xn+-co-diffusion characteristics were studied by secondary ion mass spectrometry. In the Xn+-only diffusion case, the Xn+ diffuses considerably slower than the Ti4+. In the Ti4+/Xn+ co-diffusion case, the faster Ti4+ controls the diffusion of the slower Xn+. The Xn+ diffusivity increases linearly with the initial Ti-metal thickness and the increase depends on the Xn+ species. The phenomenon is ascribed to the generation of additional defects induced by the diffusion of faster Ti4+ ions, which favors and assists the subsequent diffusion of slower Xn+ ion. For the diffusion system studied here, it can be utilized to substantially shorten device fabrication period, improve device performance and produce new materials. [ABSTRACT FROM AUTHOR]