1. Study of dielectric properties in stacked high-k dielectric metal oxide semiconductor capacitor (MOSCAP) devices.
- Author
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Behera, Makhes K., Yarbrough, Kelsea A., and Bahoura, Messaoud
- Abstract
With the current technology having reached the physical limits of size downscaling, efforts need to be made toward the development of new dielectric materials to ensure a low leakage current density that can prevent the tunneling of charges through the dielectric layer. The tunneling of the charges through the dielectric layer is a major factor for degradation in performance as well as higher power consumption. Therefore, recent research has been focused on using materials with high dielectric constants and low leakage characteristics. In this work, we present a detailed study on ZrO
2 and Ta2 O5 as potential high-k dielectric replacements. MOSCAP devices fabricated using high-k materials have been investigated to study their dielectric properties. Furthermore, a stacked bilayer structure of ZrO2 and Ta2 O5 was also investigated to alleviate some of the issues that come along with using high-k dielectrics instead of the more conventional SiO2 dielectric thin film. ZrO2 and Ta2 O5 dielectric thin films were successfully fabricated on N++ doped silicon substrates using the electron beam evaporation technique displaying dielectric constants of 20 and 34, respectively. The fabricated MOSCAP devices exhibited leakage current densities as low as 10–8 A/cm2 . [ABSTRACT FROM AUTHOR]- Published
- 2024
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