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The technology development, combined with chip size reductions, has significantly increased power density. Furthermore, the power limitation in portable devices has increased the importance of power consumption considerably. Approximate computing as an emerging paradigm leverages the error resiliency of applications to decrease power consumption. In this paper, we propose four approximate 4:2 compressors. We utilize the gate diffusion input to achieve significant area reduction in the proposed compressors. Afterward, we employ these compressors in the structure of Dadda multipliers. Compared to the state-of-the-art works, the proposed compressors result in, on average, 45% and 42% higher accuracy and lower area, respectively. Circuit simulations were carried out at a 32-nm carbon nanotube field-effect transistor technology node by HSPICE. The comparisons between our proposed compressors and exact compressor indicate that there has been an average improvement of 55%, 60% and 46% in the number of transistors, power consumption, and delay, respectively. In addition, the proposed multipliers were used in three image processing applications, including image multiplication, sharpening, and smoothing. The results show up to 46% and 70% improvement in the mean structure similarity index metric and peak signal-to-noise ratio compared to the state-of-the-art. [ABSTRACT FROM AUTHOR]

In this paper, structure, chemical composition and physicochemical properties of the novel polysaccharide Amuniacum gum (AMG) were assessed. The AMG had 12.21% moisture, 3.76% ash, 0.31% protein, 73.06% carbohydrate, 1.24% fat and 10% uronic acids. The elemental analysis indicated the absence of sulfur. The HPLC demonstrated the presence of galactose and arabinose as dominant sugars. The X-ray diffraction (XRD) pattern of the native gum indicated a semicrystalline structure. Furthermore, gel permeation chromatography (GPC) showed that the average molecular weight included 35 kDa. The Fourier transform infrared (FTIR) spectroscopy showed the presence of hydroxyl, carboxyl and methyl groups. Moreover, 1H and 13C NMR analysis demonstrated that AMG included a backbone of β-D-Galp residues and was mainly branched through 4-O-methyl-α-D-glucopyranosyl units. Results of thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) indicated that the thermal decomposition of AMG occurred at nearly 278 °C. In conclusion, these results highlight that the novel gum can be used in food and pharmaceutical industries. [ABSTRACT FROM AUTHOR]

This paper presents an ultra-low power 3T gain-cell embedded DRAM (GC-eDRAM) cell in fin field-effect transistor (FinFET). This memory structure uses fast and low leakage FinFET transistors to improve frequent refresh issue and reduce retention power consumption. To achieve high retention time and low leakage power, we use series low power transistors in the path of data failure reducing the leakage current thanks to the stack effect. Due to the slower failure of data '1' and '0', data retention time (DRT) and thus refresh frequency improving, refresh power and retention power reduction would be achieved. The 2-kB array was simulated in FinFET sub-22 nm process nodes using HSPICE. The proposed structure at 20 nm FinFET technology demonstrates over 130× higher DRT, 70% lower static power consumption, and over 50% lower cell area than the 4T cell in 28 nm fully-depleted silicon-on-insulator (FD-SOI) technology. Additionally, it offers three orders of magnitude reduction in retention power consumption compared to 4T DRM and 4TSS cells. The proposed 3T cell provides 100–1000× higher DRT than the 4TSS cell in FinFET sub-22 nm technologies. [ABSTRACT FROM AUTHOR]

On the evening of 15 January 2022, the Hunga Tonga-Hunga Ha’apai volcano1 unleashed a violent underwater eruption, blanketing the surrounding land masses in ash and debris2,3. The eruption generated tsunamis observed around the world. An event of this type last occurred in 1883 during the eruption of Krakatau4, and thus we have the first observations of a tsunami from a large emergent volcanic eruption captured with modern instrumentation. Here we show that the explosive eruption generated waves through multiple mechanisms, including: (1) air–sea coupling with the initial and powerful shock wave radiating out from the explosion in the immediate vicinity of the eruption; (2) collapse of the water cavity created by the underwater explosion; and (3) air–sea coupling with the air-pressure pulse that circled the Earth several times, leading to a global tsunami. In the near field, tsunami impacts are strongly controlled by the water-cavity source whereas the far-field tsunami, which was unusually persistent, can be largely described by the air-pressure pulse mechanism. Catastrophic damage in some harbours in the far field was averted by just tens of centimetres, implying that a modest sea level rise combined with a future, similar event would lead to a step-function increase in impacts on infrastructure. Piecing together the complexity of this event has broad implications for coastal hazards in similar geophysical settings, suggesting a currently neglected source of global tsunamis.January 2022 saw the first observations of a tsunami resulting from a large emergent volcanic eruption (Hunga Tonga) captured using modern instrumentation, with broad implications for hazard management in similar geophysical settings. [ABSTRACT FROM AUTHOR]

This paper introduces a 10T single-ended SRAM cell with high stability and low static power. The read static noise margin is augmented by using a Schmitt-trigger inverter and decoupling the storage node from the read bitline by adding one transistor. Since writing "1" is difficult in single-ended SRAM cells, using proper capacitive coupling and also extra pMOS transistor as an access transistor mitigates the problem. To evaluate read, write, and hold yields, we performed 10,000 Monto Carlo simulations in the 32-nm technology, and the results show our cell has 7.5×, 1.4×, and 1.1 × more yields than that of the conventional 6T SRAM cell. The proposed cell also has the least static power consumption. This amount is 1.5× less than the conventional 6T at the supply voltage of 0.5 V. [ABSTRACT FROM AUTHOR]

Adverse cardiac remodeling after myocardial infarction (MI) can lead to the syndrome of heart failure (HF). Recently, changes in gut microbiota composition (dysbiosis) have appeared as a novel candidate that may be linked to the development of CR and HF. The aim of this trial was to evaluate the effects of probiotics administration on attenuating CR in patients with MI. A single-center double-blind placebo-controlled stratified randomized clinical study was conducted in 44 subjects with MI who underwent percutaneous coronary intervention (PCI). Patients were randomly assigned to take, with lunch, either a probiotic capsule containing 1.6 × 109 colony-forming unit (CFU) of bacteria (treatment group) or capsules contained inulin (control group) over 3 months. CR biomarkers (including serum procollagen III, transforming growth factor beta (TGF-β), trimethylamine N-oxide (TMAO), and matrix metallopeptidase 9 (MMP-9)) were assessed. Echocardiography results were measured at baseline and after the intervention. Significant decreases were seen in serum TGF-β concentrations (− 8.0 ± 2.1 vs. − 4.01 ± 1.8 pg/mL, p = 0.001) and TMAO levels (− 17.43 ± 10.20 vs. − 4.54 ± 8.7 mmol/L, p = 0.043), and there were no differences were seen in MMP-9 (− 4.1 ± 0.12 vs. − 4.01 + 0.15 nmol/mL, p = 0.443) and procollagen III levels (− 1.35 ± 0.70 vs. 0.01 + 0.3 mg/L, p = 0.392) subsequent to probiotics supplementation compared with the placebo group. Improvements in echocardiographic indices were also greater in the probiotics group as compared with that in the control group, but not at a significant level. Regression analysis revealed that baseline left ventricular ejection fraction (LVEF), and changes of procollagen III, predicted 62% of the final LVEF levels. Probiotics administration may have a beneficial effect on the cardiac remodeling process in patients with myocardial infarction. Iranian Registry of Clinical Trials (IRCT): IRCT20121028011288N15 [ABSTRACT FROM AUTHOR]

This paper presents a low leakage power 10T single-ended SRAM cell in the sub-threshold region that improves read, write, and hold stability. While at low voltages, the write-ability is increased by temporarily floating the data node, the read stability of the cell is maintained approximately as equal as the hold state by separating the data-storage node from the read bit line by using only a single transistor. According to Simulations using HSPICE software in 10 nm FinFET technology, the read stability of the proposed cell is approximately 4.8× higher than the conventional 6T at 200 mV. Furthermore, the proposed cell is found to have the lowest static power dissipation, as it tends to be 4% lower than the standard six-transistor cell at this voltage. This study shows that the yield of the proposed cell is higher than 6σ in all operations, and supply voltages down to 200 mV. [ABSTRACT FROM AUTHOR]

This paper presents a novel low-leakage and high-writable 8T SRAM cell based on FinFET technology. This cell reduces leakage current and consequently leakage power by dynamically adjusting the back gate of the stacked independent-gate FinFET devices. Furthermore, these stacked transistors increase the write static noise margin of the proposed cell due to their role in reducing the strength of the pull-down network of the cross-coupled inverters. The characteristics of this cell are evaluated by device/circuit level simulations using Sentaurus device TCAD device simulator at different supply voltages and in the presence of process variations. The results indicate that the proposed SRAM cell reduces the static power by 37% and 56%, respectively, while providing comparable and even higher static noise margins, as compared to the 6T and 8T FinFET-based SRAM cells. [ABSTRACT FROM AUTHOR]

We propose an accurate model to describe the I-V characteristics of a sub-90-nm metal-oxide-semiconductor field-effect transistor (MOSFET) in the linear and saturation regions for fast analytical calculation of the current. The model is based on the BSIM3v3 model. Instead of using constant threshold voltage and early voltage, as is assumed in the BSIM3v3 model, we define these voltages as functions of the gate-source voltage. The accuracy of the model is verified by comparison with HSPICE for the 90-, 65-, 45-, and 32-nm CMOS technologies. The model shows better accuracy than the nth-power and BSIM3v3 models. Then, we use the proposed I-V model to calculate the read static noise margin (SNM) of nano-scale conventional 6T static random-access memory (SRAM) cells with high accuracy. We calculate the read SNM by approximating the inverter transfer voltage characteristic of the cell in the regions where vertices of the maximum square of the butterfly curves are placed. The results for the SNM are also in excellent agreement with those of the HSPICE simulation for 90-, 65-, 45-, and 32-nm technologies. Verification in the presence of process variations and negative bias temperature instability (NBTI) shows that the model can accurately predict the minimum supply voltage required for a target yield. [ABSTRACT FROM AUTHOR]