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Reducing interface nonradiative recombination is important for realizing highly efficient perovskite solar cells. In this work, we develop a synergistic bimolecular interlayer (SBI) strategy via 4-methoxyphenylphosphonic acid (MPA) and 2-phenylethylammonium iodide (PEAI) to functionalize the perovskite interface. MPA induces an in-situ chemical reaction at the perovskite surface via forming strong P-O-Pb covalent bonds that diminish the surface defect density and upshift the surface Fermi level. PEAI further creates an additional negative surface dipole so that a more n-type perovskite surface is constructed, which enhances electron extraction at the top interface. With this cooperative surface treatment, we greatly minimize interface nonradiative recombination through both enhanced defect passivation and improved energetics. The resulting p-i-n device achieves a stabilized power conversion efficiency of 25.53% and one of the smallest nonradiative recombination induced Voc loss of only 59 mV reported to date. We also obtain a certified efficiency of 25.05%. This work sheds light on the synergistic interface engineering for further improvement of perovskite solar cells. Reducing interface nonradiative recombination is important for realizing highly efficient perovskite solar cells. Here, the authors employ a bimolecular interlayer to functionalize the perovskite interface, achieving cooperative surface treatment and certified power conversion efficiency of 25.05%. [ABSTRACT FROM AUTHOR]

Chemical doping is an important approach to manipulating charge-carrier concentration and transport in organic semiconductors (OSCs)1–3 and ultimately enhances device performance4–7. However, conventional doping strategies often rely on the use of highly reactive (strong) dopants8–10, which are consumed during the doping process. Achieving efficient doping with weak and/or widely accessible dopants under mild conditions remains a considerable challenge. Here, we report a previously undescribed concept for the photocatalytic doping of OSCs that uses air as a weak oxidant (p-dopant) and operates at room temperature. This is a general approach that can be applied to various OSCs and photocatalysts, yielding electrical conductivities that exceed 3,000 S cm–1. We also demonstrate the successful photocatalytic reduction (n-doping) and simultaneous p-doping and n-doping of OSCs in which the organic salt used to maintain charge neutrality is the only chemical consumed. Our photocatalytic doping method offers great potential for advancing OSC doping and developing next-generation organic electronic devices.A previously undescribed photocatalytic approach enables the effective p-type and n-type doping of organic semiconductors at room temperature using only widely available weak dopants such as oxygen and triethylamine. [ABSTRACT FROM AUTHOR]

Organic electrochemical transistors (OECTs) are being researched for various applications, ranging from sensors to logic gates and neuromorphic hardware. To meet the requirements of these diverse applications, the device fabrication process must be compatible with flexible and scalable digital techniques. Here, we report a direct-write additive process to fabricate fully 3D-printed OECTs, using 3D printable conducting, semiconducting, insulating, and electrolyte inks. These 3D-printed OECTs, which operate in the depletion mode, can be fabricated on flexible substrates, resulting in high mechanical and environmental stability. The 3D-printed OECTs have good dopamine biosensing capabilities (limit of detection down to 6 µM without metal gate electrodes) and show long-term (~1 h) synapse response, indicating their potential for various applications such as sensors and neuromorphic hardware. This manufacturing strategy is suitable for applications that require rapid design changes and digitally enabled direct-write techniques. [ABSTRACT FROM AUTHOR]

Energy level alignment (ELA) at donor (D) -acceptor (A) heterojunctions is essential for understanding the charge generation and recombination process in organic photovoltaic devices. However, the ELA at the D-A interfaces is largely underdetermined, resulting in debates on the fundamental operating mechanisms of high-efficiency non-fullerene organic solar cells. Here, we systematically investigate ELA and its depth-dependent variation of a range of donor/non-fullerene-acceptor interfaces by fabricating and characterizing D-A quasi bilayers and planar bilayers. In contrast to previous assumptions, we observe significant vacuum level (VL) shifts existing at the D-A interfaces, which are demonstrated to be abrupt, extending over only 1–2 layers at the heterojunctions, and are attributed to interface dipoles induced by D-A electrostatic potential differences. The VL shifts result in reduced interfacial energetic offsets and increased charge transfer (CT) state energies which reconcile the conflicting observations of large energy level offsets inferred from neat films and large CT energies of donor - non-fullerene-acceptor systems. Energy level alignment (ELA) at donor-acceptor heterojunctions is of vital importance yet largely undetermined in organic solar cells. Here, authors determine the heterojunction ELA with (mono) layer-by-layer precision to understand the co-existence of efficient charge. [ABSTRACT FROM AUTHOR]

Conducting polymers, such as the p-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), have enabled the development of an array of opto- and bio-electronics devices. However, to make these technologies truly pervasive, stable and easily processable, n-doped conducting polymers are also needed. Despite major efforts, no n-type equivalents to the benchmark PEDOT:PSS exist to date. Here, we report on the development of poly(benzimidazobenzophenanthroline):poly(ethyleneimine) (BBL:PEI) as an ethanol-based n-type conductive ink. BBL:PEI thin films yield an n-type electrical conductivity reaching 8 S cm−1, along with excellent thermal, ambient, and solvent stability. This printable n-type mixed ion-electron conductor has several technological implications for realizing high-performance organic electronic devices, as demonstrated for organic thermoelectric generators with record high power output and n-type organic electrochemical transistors with a unique depletion mode of operation. BBL:PEI inks hold promise for the development of next-generation bioelectronics and wearable devices, in particular targeting novel functionality, efficiency, and power performance. The development of n-type conductive polymer inks is critical for the development of next-generation opto-electronic devices that rely on efficient hole and electron transport. Here, the authors report an alcohol-based, high performance and stable n-type conductive ink for printed electronics. [ABSTRACT FROM AUTHOR]

Although perovskite light-emitting diodes (PeLEDs) have recently experienced significant progress, there are only scattered reports of PeLEDs with both high efficiency and long operational stability, calling for additional strategies to address this challenge. Here, we develop perovskite-molecule composite thin films for efficient and stable PeLEDs. The perovskite-molecule composite thin films consist of in-situ formed high-quality perovskite nanocrystals embedded in the electron-transport molecular matrix, which controls nucleation process of perovskites, leading to PeLEDs with a peak external quantum efficiency of 17.3% and half-lifetime of approximately 100 h. In addition, we find that the device degradation mechanism at high driving voltages is different from that at low driving voltages. This work provides an effective strategy and deep understanding for achieving efficient and stable PeLEDs from both material and device perspectives. The field of perovskite light-emitting diodes witnesses rapid development in both device processing strategies and performances. Here Wang et al. develop high-quality perovskite-molecule composite thin films and achieve high quantum efficiency of 17.3% and half-lifetime of 100 h. [ABSTRACT FROM AUTHOR]

Solar cells based on metal halide perovskites are one of the most promising photovoltaic technologies1–4. Over the past few years, the long-term operational stability of such devices has been greatly improved by tuning the composition of the perovskites5–9, optimizing the interfaces within the device structures10–13, and using new encapsulation techniques14,15. However, further improvements are required in order to deliver a longer-lasting technology. Ion migration in the perovskite active layer—especially under illumination and heat—is arguably the most difficult aspect to mitigate16–18. Here we incorporate ionic liquids into the perovskite film and thence into positive–intrinsic–negative photovoltaic devices, increasing the device efficiency and markedly improving the long-term device stability. Specifically, we observe a degradation in performance of only around five per cent for the most stable encapsulated device under continuous simulated full-spectrum sunlight for more than 1,800 hours at 70 to 75 degrees Celsius, and estimate that the time required for the device to drop to eighty per cent of its peak performance is about 5,200 hours. Our demonstration of long-term operational, stable solar cells under intense conditions is a key step towards a reliable perovskite photovoltaic technology. Addition of an ionic liquid, BMIMBF4, to metal halide perovskite solar cells improves their efficiency and long-term operation under accelerated aging conditions of high temperature and full-spectrum sunlight. [ABSTRACT FROM AUTHOR]

A major efficiency limit for solution-processed perovskite optoelectronic devices, for example light-emitting diodes, is trap-mediated non-radiative losses. Defect passivation using organic molecules has been identified as an attractive approach to tackle this issue. However, implementation of this approach has been hindered by a lack of deep understanding of how the molecular structures influence the effectiveness of passivation. We show that the so far largely ignored hydrogen bonds play a critical role in affecting the passivation. By weakening the hydrogen bonding between the passivating functional moieties and the organic cation featuring in the perovskite, we significantly enhance the interaction with defect sites and minimize non-radiative recombination losses. Consequently, we achieve exceptionally high-performance near-infrared perovskite light-emitting diodes with a record external quantum efficiency of 21.6%. In addition, our passivated perovskite light-emitting diodes maintain a high external quantum efficiency of 20.1% and a wall-plug efficiency of 11.0% at a high current density of 200 mA cm−2, making them more attractive than the most efficient organic and quantum-dot light-emitting diodes at high excitations. Improved understanding of passivation leads to near-infrared perovskite light-emitting diodes with 21.6% external quantum efficiency. [ABSTRACT FROM AUTHOR]

Polymers are lightweight, flexible, solution-processable materials that are promising for low-cost printed electronics as well as for mass-produced and large-area applications. Previous studies demonstrated that they can possess insulating, semiconducting or metallic properties; here we report that polymers can also be semi-metallic. Semi-metals, exemplified by bismuth, graphite and telluride alloys, have no energy bandgap and a very low density of states at the Fermi level. Furthermore, they typically have a higher Seebeck coefficient and lower thermal conductivities compared with metals, thus being suitable for thermoelectric applications. We measure the thermoelectric properties of various poly(3,4-ethylenedioxythiophene) samples, and observe a marked increase in the Seebeck coefficient when the electrical conductivity is enhanced through molecular organization. This initiates the transition from a Fermi glass to a semi-metal. The high Seebeck value, the metallic conductivity at room temperature and the absence of unpaired electron spins makes polymer semi-metals attractive for thermoelectrics and spintronics. [ABSTRACT FROM AUTHOR]

The original version of this Article omitted the following statement from the Acknowledgements: 'We acknowledge MAX IV Laboratory for time on Beamline SPECIES-APXPS under Proposal 20200356. This has been added to the Acknowledgements in both the PDF and HTML versions of the Article. [Extracted from the article]

Thermoelectric generators (TEGs) transform a heat flow into electricity. Thermoelectric materials are being investigated for electricity production from waste heat (co-generation) and natural heat sources. For temperatures below 200 °C, the best commercially available inorganic semiconductors are bismuth telluride (Bi2Te3)-based alloys, which possess a figure of merit ZT close to one. Most of the recently discovered thermoelectric materials with ZT>2 exhibit one common property, namely their low lattice thermal conductivities. Nevertheless, a high ZT value is not enough to create a viable technology platform for energy harvesting. To generate electricity from large volumes of warm fluids, heat exchangers must be functionalized with TEGs. This requires thermoelectric materials that are readily synthesized, air stable, environmentally friendly and solution processable to create patterns on large areas. Here we show that conducting polymers might be capable of meeting these demands. The accurate control of the oxidation level in poly(3,4-ethylenedioxythiophene) (PEDOT) combined with its low intrinsic thermal conductivity (λ=0.37 W m−1 K−1) yields a ZT=0.25 at room temperature that approaches the values required for efficient devices. [ABSTRACT FROM AUTHOR]

A correction to the article "Semi-metallic polymers" that was published online in a previous issue is presented.