1. Optical characterization of GaAs-based Schottky photovoltaic heterostructures with embedded III-N-V quantum wells.
- Author
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Pérez-Oviedo, T. A., Bustos-Ibarra, M. I., Vera-Gallegos, P. A., Belio-Manzano, A., Olvera-Enríquez, J. P., Briones, E., Lopez-Luna, E., Méndez-García, V. H., Espinosa-Vega, L. I., and Cortes-Mestizo, I. E.
- Abstract
N-type GaAs photovoltaic heterostructures with embedded GaN
x As1-x /GaAs multi-quantum well nanostructures are proposed to develop a Schottky-junction photodevice to generate an alternative to the conventional p-i-n photovoltaic architecture that allows a simple characterization process of the GaNAs performance in photoconversion. Molecular beam epitaxy was employed to grow two samples with well layer widths of 6 and 12 nm, using identical growth processes. Variations in the nominal x value and crystallinity were found by high-resolution X-ray diffraction (HRXRD), showing a better photoresponse for the sample with higher x and crystallinity. Photoluminescence measurements were performed to explore the presence of n-type GaAs and GaNAs/GaAs arrangement, indicating an identical n-type GaAs growth process across the samples through emissions linked to silicon-doped GaAs. Photoreflectance spectroscopy was used to examine the electric field strength and distribution, revealing that the electric field at the surface diminishes the conversion efficiency. Optical characterization techniques confirmed the presence of GaNAs/GaAs multi-quantum wells and bound states in the nanostructure, which were estimated through a numerical study of the band structure and carrier distribution. A Schottky-junction photodevice was produced by a rectifying(ohmic) junction on the front(rear) side of the heterostructure to evaluate the design as a solar cell. The devices exhibited typical J-V characteristics under both dark and illuminated conditions of Schottky-based solar cells, indicating the viability of this photovoltaic heterostructure as a methodology to understand and optimize the employment of GaNAs in optoelectronics. [ABSTRACT FROM AUTHOR]- Published
- 2024
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