1. Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films.
- Author
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Jing, Yibo, Xu, Hao, Miao, Dongming, Guo, Yiwei, Han, Jia, Wang, Lin, Song, Jianjun, and Dai, Xianying
- Abstract
To study the effect of various parameters of wafer-level strained SOI on the stress of the top Si layer, strained-SOI wafers were successfully fabricated by depositing highly stressed SiN films. Raman tests were performed on the top layer of strained Si to measure the strain. ANSYS software was applied to simulate the effects of parameter changes of highly stressed SiN films, the variation of the material parameters of each layer, and the effect of scaling effect under the thickness variation on the top layer strained Si. The simulation results show that the existence of the scale effect of the thin film material affects the stress of the top Si layer, the thicker the highly stressed SiN film is and the larger the stress values are, the larger the strain of the top Si layer is; and the thicker the SOI wafer substrate Si is, the smaller the strain of top Si layer is, so that the effect of substrate Si should also be considered in the wafer-level SOI strain model. Finally, the strain model is optimized using experimental measurements, and the model calculation error is approximately reduced by 40%. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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