1. The role of vast off-stoichiometry of SnSe thin film on structural, morphological, optical, and electrical properties for photovoltaic applications.
- Author
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Sarkar, Prosenjit, Nisha, Kumar, Pawan, and Katiyar, Ram S.
- Abstract
A layered chalcogenide material, tin monoselenide (SnSe), has recently garnered considerable interest in optoelectronics owing to its remarkable opto-electrical properties. Our goal in conducting this research is to better understand the SnSe vast off-stoichiometry ratio. The structural properties of all films examined by X-ray diffraction (XRD) confirmed formation of orthorhombic SnSe with a prominent (111) orientation peak. Raman spectroscopy revealed the successful formation of a single phase of α-SnSe under Sn-rich conditions. The calculated direct bandgap using Tauc’s plot is found to be increased from 1.37 eV (under Sn rich) to 1.68 eV (under Se-rich). Based on Hall measurement, largest carrier mobility (34.3 cm
2 V−1 S−1 ) is found in Sn-rich SnSe conditions. The results show how off-stoichiometry-related imperfections have a significant impact on optoelectrical characteristics. And by adjusting the Sn/Se ratio, the conductivity type can be modified. Using this approach will undoubtedly result in an improvement in the overall performance of thin-film solar cells. This will enable the fabrication of extremely efficient SnSe homojunction solar cells. [ABSTRACT FROM AUTHOR]- Published
- 2023
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