1. Etch Rate Uniformity Monitoring for Photoresist Etch Using Multi-channel Optical Emission Spectroscopy and Scanning Floating Harmonic Probe in an Inductively Coupled Plasma Reactor.
- Author
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Lee, Sanghun, Han, Sanghee, Kim, Jaehyeon, Jeon, Minsung, and Chae, Heeyeop
- Subjects
PLASMA etching ,PLASMA spectroscopy ,RADICAL ions ,EMISSION spectroscopy ,OPTICAL spectroscopy ,INDUCTIVELY coupled plasma atomic emission spectrometry - Abstract
The etch rate uniformity in photoresist etching was monitored using multi-channel optical emission spectroscopy (OES) and a spatially resolved etch rate model incorporating radical and ion etching characteristics. The F radical densities at various locations were estimated using 8-channel OES and applied to a radical-spontaneous etch rate model to examine the impact of radicals on the etch rate. The ion fluxes were measured using a scanning floating harmonic probe for an ion-enhanced etch rate model to investigate the effect of ions on the etch rate. A combined etch rate model was proposed to explain the effects on both radical and ion etching characteristics, and the etch rates and etch rate uniformities predicted by the model were quantitatively compared with the measured values. The calculated R-squared score (R
2 ) and the mean absolute percentage error (MAPE) of the etch rates predicted by the model were 0.99 and 1.3%, respectively. The etch rate uniformities predicted by the model showed good accuracy with R2 of 0.99 and MAPE of 12.0% compared to the measured values, and the combined etch rate model also successfully predicted the distribution of the etch rate. This study demonstrates that multi-channel OES and the developed model can quantitatively predict the etch rate distribution of plasma etching processes. [ABSTRACT FROM AUTHOR]- Published
- 2024
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