1. Impedance spectroscopy and piezoelectric property of LiF-doped PZN-PZT low-temperature sintering piezoelectric ceramics.
- Author
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Zeng, Ziqing, Wu, Qiuchen, Hao, Mengmeng, Lu, Wenzhong, Fan, Guifen, Yuchi, Ming, and Ding, Mingyue
- Subjects
PIEZOELECTRIC ceramics ,IMPEDANCE spectroscopy ,DIFFUSION bonding (Metals) ,FERROELECTRICITY ,ANNEALING furnaces ,OXYGEN - Abstract
Low-temperature sintering piezoelectric ceramics of 0.3Pb(Zn
1/3 Nb2/3 )O3 -0.7Pb(Zr0.49 Ti0.51 )O3 with LiF and Sm2 O3 additives were fabricated by a conventional solid-state reaction. In view of the possible defects caused by LiF doping, the as-sintered specimens were annealed in oxygen to enhance grain size and piezoelectric properties. X-ray diffraction revealed that Sm2 O3 and LiF were dissolved in the lattices, forming a pure perovskite structure. Scanning electron microscopy showed that the grain size decreased with increased LiF amount. Hysteresis-loop studies indicated that increased LiF led to ferroelectricity deterioration. Impedance spectroscopy and activation-energy analyses revealed decreased oxygen vacancies after annealing in oxygen. Energy-dispersive spectrometry revealed that fluorine volatilized during annealing in oxygen. Thus, the decreased amounts of FO and VO were presumed responsible for the improved piezoelectric properties. Upon doping 1 mol% LiF, sintering temperature decreased from 1125 to 950 °C. Annealing in oxygen greatly improved the piezoelectric properties fromd 33 = 252 pC/N andK p = 0.53 tod 33 = 403 pC/N andK p = 0.56, respectively. [ABSTRACT FROM AUTHOR]- Published
- 2018
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