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This paper proposes a double-heterostructure (DH) GaN/AlGaN epitaxial layer that contains an AlGaN interlayer. The electrical properties are characterized and compared with conventional single-heterostructure (SH) GaN/AlGaN epitaxial layers. The Hall effect measurement shows that the DH GaN/AlGaN epitaxial layer has a carrier mobility of 1815 cm2 V−1 s−1, which is approximately 20.37% higher than the SH GaN/AlGaN epitaxial layer. The weak-beam dark-field images taken by transmission electron microscopy show that the AlGaN interlayer in the DH GaN/AlGaN epitaxial layer can block dislocations. The full widths at half maximum results show that there is no significant difference in the screw dislocation density between the SH and DH GaN/AlGaN epitaxial layers. However, the edge dislocation density and the overall internal stress in the DH GaN/AlGaN epitaxial layer are less than those in the SH GaN/AlGaN epitaxial layer. Finally, the physical mechanism of how edge dislocations impact the electrical properties of a DH GaN/AlGaN epitaxial layer is discussed. [ABSTRACT FROM AUTHOR]

Microcontact affects the fabrication and assembly of MEMS/NEMS system, the contact between thin film microcavity and microcantilever beam, and the motion of microstructure. In this work, in the microcontact of three-dimensional elastic-plastic Weierstrass-Mandelbrot (W-M) fractal surfaces, influence of fractal dimension was studied based on a comprehensive contact model. With increasing fractal dimension, maximum microcontact force in the plastic deformation zone shows parabolic change; comparably, the intermediate force in elastic zone parabolically varies. For both the forces, the minimum values are obtained when the fractal dimension is 2.5. Besides, in the plastic deformation zone, the real contact areas increase with the fractal dimension. Experiments were completed to compare with the numerical analysis. The results show that the simulated contact force curve is in line with the experimental load curve when Young's modulus E and hardness H are equal to the actual measured values. Nevertheless, it will greatly deviate from the experimental load curve when E and H differ from the measured values. [ABSTRACT FROM AUTHOR]